Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRFR2407, MOSFET N channel 42A 75V

IRFR2407

IRFU2407

HEXFET

Power MOSFET

Seventh Generation HEXFET

Power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per

silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that

HEXFET power MOSFETs are well known for, provides

the designer with an extremely efficient and reliable

device for use in a wide variety of applications.

The D-Pak is designed for surface mounting using

vapor phase, infrared, or wave soldering techniques.

The straight lead version (IRFU series) is for through-

hole mounting applications. Power dissipation levels

up to 1.5 watts are possible in typical surface mount

applications.

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 10V 42

@ T

= 100°C Continuous Drain Current, V

@ 10V 29 A

Pulsed Drain Current  170

= 25°C Power Dissipation 110 W

Linear Derating Factor 0.71 W/°C

Gate-to-Source Voltage ± 20 V

Single Pulse Avalanche Energy 130 mJ

Avalanche Current 25 A

Repetitive Avalanche Energy 11 mJ

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns

Operating Junction and -55 to + 175

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)

Absolute Maximum Ratings

DSS

= 75V

DS(on)

= 0.026Ω

= 42A

Description

3/1/00

www.irf.com 1

l Surface Mount (IRFR2407)

l Straight Lead (IRFU2407)

l Advanced Process Technology

l Dynamic dv/dt Rating

l Fast Switching

l Fully Avalanche Rated

PD -93862

D-Pak I-Pak

IRFR2407 IRFU2407

Parameter Typ. Max. Units

θJC

Junction-to-Case ––– 1.4

θJA

Junction-to-Ambient (PCB mount)* ––– 50 °C/W

θJA

Junction-to-Ambient ––– 110

Thermal Resistance

* When mounted on 1" square PCB (FR-4 or G-10 Material) .

For recommended footprint and soldering techniques refer to application note #AN-994

Summary of content (10 pages)

PAGE 1
PD -93862 IRFR2407 IRFU2407 Surface Mount (IRFR2407) l Straight Lead (IRFU2407) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated Description HEXFET® Power MOSFET l D VDSS = 75V RDS(on) = 0.026Ω G Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
PAGE 2
IRFR/U2407 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 75 ––– ––– 2.
PAGE 3
IRFR/U2407 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 100 100 10 4.5V 20µs PULSE WIDTH TJ = 25 °C 1 0.1 1 10 4.5V 10 100 3.0 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 1000 100 TJ = 175 ° C TJ = 25 ° C 10 V DS = 25V 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 Fig 3. Typical Transfer Characteristics www.irf.
PAGE 4
IRFR/U2407 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance(pF) 3000 Ciss 2000 1000 Coss Crss VGS , Gate-to-Source Voltage (V) 20 4000 ID = 25A VDS = 60V VDS = 37V VDS = 15V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 1 10 100 0 0 VDS , Drain-to-Source Voltage (V) 20 40 60 80 100 120 Q G , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs.
PAGE 5
IRFR/U2407 50 VDS LIMITED BY PACKAGE VGS I D , Drain Current (A) 40 RD D.U.T. RG + -VDD 30 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 P DM 0.05 0.02 0.
PAGE 6
IRFR/U2407 240 D R IV E R L VDS D .U .T RG + V - DD IA S 20V A 0 .0 1 Ω tp Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp EAS , Single Pulse Avalanche Energy (mJ) 1 5V TOP 200 BOTTOM ID 10A 18A 25A 160 120 80 40 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ 12V .2µF .3µF QGS QGD D.U.T.
PAGE 7
IRFR/U2407 Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + • • • • RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. D= Period + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
PAGE 8
IRFR/U2407 D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) 6 .7 3 (.2 6 5 ) 6 .3 5 (.2 5 0 ) -A 1 .2 7 (.0 5 0 ) 0 .8 8 (.0 3 5 ) 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 1 .1 4 (.0 4 5 ) 0 .8 9 (.0 3 5 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 4 6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 6 .2 2 (.2 4 5 ) 5 .9 7 (.2 3 5 ) 1.0 2 (.0 4 0 ) 1.6 4 (.0 2 5 ) 1 0 .4 2 (.4 1 0 ) 9 .4 0 (.3 7 0 ) 1 2 1 - GATE 0 .5 1 (.0 2 0 ) M IN . -B 1 .5 2 (.0 6 0 ) 1 .1 5 (.
PAGE 9
IRFR/U2407 I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) 6 .7 3 (.26 5 ) 6 .3 5 (.25 0 ) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) -A 1 .2 7 ( .0 5 0 ) 0 .8 8 ( .0 3 5 ) 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 4 6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 6 .2 2 ( .2 4 5 ) 5 .9 7 ( .2 3 5 ) 1 .5 2 (.0 6 0 ) 1 .1 5 (.
PAGE 10
IRFR/U2407 D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 1 6 .3 ( .6 41 ) 1 5 .7 ( .6 19 ) 1 2 .1 ( .4 7 6 ) 1 1 .9 ( .4 6 9 ) F E E D D IR E C T IO N TR L 16 .3 ( .6 4 1 ) 15 .7 ( .6 1 9 ) 8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 ) F E E D D IR E C T IO N NO TES : 1 . C O N T R O L L IN G D IM E N S IO N : M ILL IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M ILL IM E T E R S ( IN C H E S ). 3 .