Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRFR4620PBF, MOSFET

06/08/09

www.irf.com 1

HEXFET

Power MOSFET

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

Applications

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

IRFR4620PbF

IRFU4620PbF

GDS

Gate Drain Source

PD -96207A

DPak

IRFR4620PbF

IPAK

IRFU4620PbF

DSS

200V

DS(on)

typ.

64m

max.

78m

24A

Notes  through  are on page 11

ORDERING INFORMATION:

See detailed ordering and shipping information on the last page of this data sheet.

Absolute Maximum Ratings

Symbol Parameter Units

@ T

= 25°C

Continuous Drain Current, V

@ 10V

@ T

= 100°C Continuous Drain Current, V

@ 10V

Pulsed Drain Current

= 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

Gate-to-Source Voltage

dv/dt

Peak Diode Recovery

V/ns

Operating Junction and

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Avalanche Characteristics

AS (Thermally limited)

Sin

le Pulse Avalanche Ener

Avalanche Current

Repetitive Avalanche Ener

Thermal Resistance

Symbol Parameter Typ. Max. Units

θJC

Junction-to-Case

–––

1.045

θJA

Junction-to-Ambient (PCB Mount)

–––

θJA

Junction-to-Ambient

––– 110

°C/W

°C

113

See Fig. 14, 15, 22a, 22b,

300

144

-55 to + 175

± 20

0.96

Max.

100

Summary of content (11 pages)

PAGE 1
PD -96207A IRFR4620PbF IRFU4620PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D VDSS RDS(on) typ. max.
PAGE 2
IRFR/U4620PbF Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current IGSS RG(int) Min. Typ. Max. Units Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage 200 ––– ––– 3.0 ––– ––– ––– ––– ––– 0.23 64 ––– ––– ––– ––– ––– Internal Gate Resistance ––– 2.
PAGE 3
IRFR/U4620PbF 1000 1000 100 BOTTOM 10 1 5.0V 0.1 ≤60µs PULSE WIDTH Tj = 25°C 100 BOTTOM 10 5.0V 1 ≤60µs PULSE WIDTH Tj = 175°C 0.1 0.01 0.1 1 10 0.1 100 Fig 1. Typical Output Characteristics 10 100 Fig 2. Typical Output Characteristics 1000 3.5 100 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) TJ = 175°C T J = 25°C 10 1 VDS = 50V ≤60µs PULSE WIDTH 0.
PAGE 4
IRFR/U4620PbF 1000 T J = 175°C ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 T J = 25°C 10 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100µsec 1msec 10 10msec DC 1 Tc = 25°C Tj = 175°C Single Pulse VGS = 0V 0.1 1.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 1.
PAGE 5
IRFR/U4620PbF Thermal Response ( Z thJC ) °C/W 10 1 D = 0.50 0.20 0.10 0.05 0.1 τJ 0.02 0.01 0.01 R1 R1 τJ τ1 R2 R2 τC τ2 τ1 Ci= τi/Ri Ci i/Ri 1E-005 0.0001 τ τi (sec) 0.000311 0.589 0.003759 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 τ2 Ri (°C/W) 0.456 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 13.
PAGE 6
.0 90 5.5 80 5.0 70 4.5 IF = 10A V R = 100V TJ = 25°C TJ = 125°C 60 4.0 3.5 IRRM (A) VGS(th), Gate threshold Voltage (V) IRFR/U4620PbF ID = 100µA ID = 250uA ID = 1.0mA ID = 1.0A 3.0 2.5 2.0 50 40 30 20 10 1.5 0 1.0 -75 -50 -25 0 0 25 50 75 100 125 150 175 200 600 800 1000 diF /dt (A/µs) T J , Temperature ( °C ) Fig. 17 - Typical Recovery Current vs. dif/dt Fig 16. Threshold Voltage vs.
PAGE 7
IRFR/U4620PbF Driver Gate Drive D.U.T - - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + D= Period P.W. + + - Body Diode Forward Current di/dt D.U.T.
PAGE 8
IRFR/U4620PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information (;$03/( 7+,6 ,6 $1 ,5)5 3$57 180%(5 :,7+ $66(0%/< ,17(51$7,21$/ /27 &2'( ,5)5 $ 5(&7,),(5 $66(0%/(' 21 :: /2*2 ,1 7+( $66(0%/< /,1( $ '$7( &2'( <($5 :((.
PAGE 9
IRFR/U4620PbF I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information (;$03/( 7+,6 ,6 $1 ,5)8 :,7+ $66(0%/< /27 &2'( $66(0%/(' 21 :: ,1 7+( $66(0%/< /,1( $ 1RWH 3 LQ DVVHPEO\ OLQH SRVLWLRQ LQGLFDWHV /HDG )UHH ,17(51$7,21$/ 5(&7,),(5 /2*2 3$57 180%(5 ,5)8 $ $66(0%/< /27 &2'( '$7( &2'( <($5 :((.
PAGE 10
IRFR/U4620PbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481.
PAGE 11
IRFR/U4620PbF Orderable part number Package Type IRFR4620PbF IRFR4620TRPbF D-PAK D-PAK IRFU4620PbF I-PAK Standard Pack Form Quantity Tube/Bulk 75 Tape and Reel 2000 Tube/Bulk Note 75 Qualification Information† Industrial Qualification level †† (per JEDEC JESD47F ††† guidelines) Comments: This family of products has passed JEDEC’s Industrial qualification. IR’s Consumer qualification level is granted by extension of the higher Industrial level.