Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRFR5410PBF, MOSFET

IRFR5410PbF

IRFU5410PbF

HEXFET

Power MOSFET

DSS

= -100V

DS(on)

= 0.205Ω

= -13A

12/13/04

Parameter Typ. Max. Units

θJC

Junction-to-Case  1.9

θJA

Junction-to-Ambient (PCB mount)**  50 °C/W

θJA

Junction-to-Ambient  110

Thermal Resistance

D-Pak

O-252AA

I-Pak

TO-251AA

l Ultra Low On-Resistance

l P-Channel

l Surface Mount (IRFR5410)

l Straight Lead (IRFU5410)

l Advanced Process Technology

l Fast Switching

l Fully Avalanche Rated

Description

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ -10V -13

@ T

= 100°C Continuous Drain Current, V

@ -10V -8.2 A

Pulsed Drain Current  -52

= 25°C Power Dissipation 66 W

Linear Derating Factor 0.53 W/°C

Gate-to-Source Voltage ± 20 V

Single Pulse Avalanche Energy 194 mJ

Avalanche Current -8.4 A

Repetitive Avalanche Energy 6.3 mJ

dv/dt Peak Diode Recovery dv/dt  -5.0 V/ns

Operating Junction and -55 to + 150

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Absolute Maximum Ratings

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The D-Pak is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU series) is for through-hole mounting

applications. Power dissipation levels up to 1.5 watts are

possible in typical surface mount applications.

PD -95314A

www.irf.com 1

l Lead-Free

Summary of content (11 pages)

PAGE 1
PD -95314A IRFR5410PbF IRFU5410PbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount (IRFR5410) Straight Lead (IRFU5410) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = -100V RDS(on) = 0.205Ω G ID = -13A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
PAGE 2
IRFR/U5410PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
PAGE 3
IRFR/U5410PbF 100 100 VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V 10 TOP -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TOP 1 -4.5V 0.1 10 -4.5V 1 20µs PULSE WIDTH TJ = 25 °C 0.01 0.1 1 10 0.1 0.1 100 -VDS , Drain-to-Source Voltage (V) TJ = 150 ° C 1 V DS = 10V 20µs PULSE WIDTH 5 6 7 8 9 10 -VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.
PAGE 4
IRFR/U5410PbF 2000 1200 -VGS , Gate-to-Source Voltage (V) 1600 C, Capacitance (pF) 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd Ciss 800 Coss Crss 400 ID = -8.4A 15 10 5 FOR TEST CIRCUIT SEE FIGURE 13 0 0 0 A 1 10 10 100 30 40 50 60 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs.
PAGE 5
IRFR/U5410PbF 15 VGS 12 -ID , Drain Current (A) RD VDS D.U.T. RG + 9 VDD -10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 6 Fig 10a. Switching Time Test Circuit 3 td(on) tr t d(off) tf VGS 10% 0 25 50 75 100 125 150 TC , Case Temperature ( °C) 90% VDS Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 PDM 0.05 0.1 0.02 0.01 0.01 0.00001 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1.
PAGE 6
IRFR/U5410PbF L VDS - V V DD + DD D.U.T RG A IAS -20V tp DRIVER 0.01Ω 15V Fig 12a. Unclamped Inductive Test Circuit I AS EAS , Single Pulse Avalanche Energy (mJ) 500 ID -3.5A -4.9A BOTTOM -7.8A TOP 400 300 200 100 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V -10V .2µF .3µF QGS QGD D.U.T.
PAGE 7
IRFR/U5410PbF Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + RG • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test VGS * + - VDD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
PAGE 8
IRFR/U5410PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 1234 ASSEMBLED ON WW 16, 1999 IN THE ASSEMBLY LINE "A" PART NUMBER INTERNATIONAL RECTIFIER LOGO Note: "P" in assembly line position indicates "Lead-Free" IRFU120 12 916A 34 ASSEMBLY LOT CODE DATE CODE YEAR 9 = 1999 WEEK 16 LINE A OR PART NUMBER INTERNATIONAL RECTIFIER LOGO IRFU120 12 ASSEMBLY LOT CODE 8 34 DATE C
PAGE 9
IRFR/U5410PbF I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE: T HIS IS AN IRFU120 WIT H AS S EMB LY LOT CODE 5678 AS S EMBLED ON WW 19, 1999 IN T HE AS S EMB LY LINE "A" INT ERNAT IONAL RECT IFIER LOGO PART NUMB ER IRF U120 919A 56 78 ASS EMB LY LOT CODE Note: "P" in as sembly line position indicates "Lead-Free" DAT E CODE YEAR 9 = 1999 WEEK 19 L INE A OR INTERNAT IONAL RECTIF IER LOGO PART NUMBER IRFU120 56 AS S EMBLY
PAGE 10
IRFR/U5410PbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481.
PAGE 11
Note: For the most current drawings please refer to the IR website at: http://www.irf.