Datasheet

Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Maximum Drain Current vs. Case Temperature
HEXFET
®
Power MOSFET
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dv/dt and dI/dt Capability
l Lead-Free
l RoHS Compliant containing no Lead, no Bromide,
and no Halogen
GDS
Gate Drain Source
Applications
l Brushed Motor drive applications
l BLDC Motor drive applications
l PWM Inverterized topologies
l Battery powered circuits
l Half-bridge and full-bridge topologies
l Electronic ballast applications
l Synchronous rectifier applications
l Resonant mode power supplies
l OR-ing and redundant power switches
l DC/DC and AC/DC converters
D-Pak
IRFR7440PbF
G
S
D
25 50 75 100 125 150 175
T
C
, Case Temperature (°C)
0
20
40
60
80
100
120
140
160
180
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
LIMITED BY PACKAGE
4 8 12 16 20
V
GS
, Gate-to-Source Voltage (V)
0
2
4
6
8
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
Ω
)
T
J
= 25°C
T
J
= 125°C
I
D
= 90A
D
S
G
V
DSS
40V
R
DS(on)
typ.
1.9m
Ω
max. 2.4m
Ω
I
D
(Silicon Limited)
180A
I
D
(Package Limited)
90A
I-Pak
IRFU7440PbF
S
D
G
D
Form Quantity
Tube/Bulk 75 IRFR7440PbF
Tape and Reel 2000 IRFR7440TRPbF
IRFU7440PbF I-PAK Tube/Bulk 75 IRFU7440PbF
Base Part Number Package Type
Standard Pack
Orderable Part Number
IRFR7440PbF D-PAK
StrongIRFET
IRFR7440PbF
IRFU7440PbF
1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback January 6, 2015