Datasheet

www.irf.com 1
HEXFET
®
Power MOSFET
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
S
D
G
GDS
Gate Drain Source
PD - 97378A
IRFS3004-7PPbF
D
2
Pak 7 Pin
G
S
S
D
S
S
S
V
DSS
40V
R
DS
(
on
)
typ.
0.90m
Ω
max.
1.25m
Ω
I
D (Silicon Limited)
400A
I
D
(Package Limited)
240A
Absolute Maximum Ratings
Symbol Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics
E
AS (Thermally limited)
Sin
g
le Pulse Avalanche Ener
g
y
mJ
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Ener
g
y
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
–––
0.40 °C/W
R
θ
JA
Junction-to-Ambient (PCB Mount)
––– 40
-55 to + 175
± 20
2.5
Max.
400
280
1610
240
A
°C
300
290
See Fig. 14, 15, 22a, 22b
380
2.0
04/22/2010