Datasheet

04/07/08
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
www.irf.com 1
IRFB3207ZPbF
IRFS3207ZPbF
IRFSL3207ZPbF
Applications
l High Efficiency Synchronous Rectification in
SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
HEXFET
®
Power MOSFET
S
D
G
GDS
Gate Drain Source
TO-220AB
IRFB3207ZPbF
D
S
D
G
D
D
S
G
D
2
Pak
IRFS3207ZPbF
TO-262
IRFSL3207ZPbF
S
D
G
V
DSS
75V
R
DS
(
on
)
typ.
3.3m
:
max. 4.1m
:
I
D
(
Silicon Limited
)
170A
c
I
D (Package Limited)
120A
Absolute Maximum Ratings
Symbol Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
A
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
I
DM
Pulsed Drain Current
d
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
f
V/ns
T
J
Operating Junction and
°C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
e
mJ
I
AR
Avalanche Current
d
A
E
AR
Repetitive Avalanche Energy
g
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
k
–––
0.50
R
θ
CS
Case-to-Sink, Flat Greased Surface , TO-220
0.50 ––– °C/W
R
θ
JA
Junction-to-Ambient, TO-220
k
––– 62
R
θ
JA
Junction-to-Ambient
(
PCB Mount
)
, D
2
Pak
jk
––– 40
170
See Fig. 14, 15, 22a, 22b
300
16
-55 to + 175
± 20
2.0
10lb
x
in (1.1N
x
m)
300
Max.
170
c
120
c
670
120
PD - 97213C