Datasheet

01/20/12
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
www.irf.com 1
IRFB3607PbF
IRFS3607PbF
IRFSL3607PbF
Applications
l High Efficiency Synchronous Rectification in
SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
HEXFET
®
Power MOSFET
S
D
G
V
DSS
75V
R
DS(on)
typ.
7.34m
max. 9.0m
I
D
80A
GDS
Gate Drain Source
TO-220AB
IRFB3607PbF
D
S
D
G
D
D
S
G
D
2
Pak
IRFS3607PbF
TO-262
IRFSL3607PbF
S
D
G
Absolute Maximum Ratings
Symbol Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, VGS @ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C Maximum Power Dissipation W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage V
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R

JC
Junction-to-Case ––– 1.045
R

CS
Case-to-Sink, Flat Greased Surface, TO-220 0.50 ––– °C/W
R

JA
Junction-to-Ambient, TO-220 ––– 62
R

JA
Junction-to-Ambient (PCB Mount) , D
2
Pak
––– 40
120
46
14
140
-55 to + 175
± 20
0.96
10lb
in (1.1N m)
300
Max.
80
56
310
PD - 97308C