Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRFS4010PBF, MOSFET

07/07/11

www.irf.com 1

HEXFET

Power MOSFET

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

Applications

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

PD - 96186A

IRFS4010PbF

IRFSL4010PbF

GDS

Gate Drain Source

Pak

IRFS4010PbF

TO-262

IRFSL4010PbF

DSS

100V

DS(on)

typ.

3.9m

max.

4.7m

180A

Absolute Maximum Ratings

Symbol

Parameter

Units

@ T

= 25°C

Continuous Drain Current, V

@ 10V

@ T

= 100°C Continuous Drain Current, V

@ 10V

Pulsed Drain Current

= 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

Gate-to-Source Voltage

dv/dt

Peak Diode Recovery

V/ns

Operating Junction and

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Avalanche Characteristics

AS (Thermally limited)

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Thermal Resistance

Symbol

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

0.40

θJA

Junction-to-Ambient (PCB Mount)

––– 40

Max.

180

127

720

375

-55 to + 175

± 20

2.5

°C/W

°C

318

See Fig. 14, 15, 22a, 22b,

300

Summary of content (10 pages)

PAGE 1
PD - 96186A IRFS4010PbF IRFSL4010PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free VDSS RDS(on) typ. max. ID 100V 3.9m: 4.
PAGE 2
IRFS/SL4010PbF Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS ΔV(BR)DSS/ΔTJ RDS(on) VGS(th) IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current IGSS RG(int) Min. Typ. Max. Units Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage 100 ––– ––– 2.0 ––– ––– ––– ––– ––– 0.10 3.9 ––– ––– ––– ––– ––– ––– ––– 4.7 4.
PAGE 3
IRFS/SL4010PbF 1000 1000 VGS 15V 10V 8.0V 7.0V 5.0V 4.5V 4.3V 4.0V 100 BOTTOM BOTTOM 100 10 1 ≤60μs PULSE WIDTH Tj = 25°C 4.0V 4.0V 0.1 0.1 10 1 10 0.1 100 Fig 1. Typical Output Characteristics Tj = 175°C 1 10 100 Fig 2. Typical Output Characteristics 2.
PAGE 4
IRFS/SL4010PbF 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 T J = 175°C 100 T J = 25°C 10 OPERATION IN THIS AREA LIMITED BY RDS(on) 1000 100μsec 100 1msec 10 10msec 1 VGS = 0V 0.01 1.0 0.2 0.6 1.0 1.4 0.1 1.
PAGE 5
IRFS/SL4010PbF Thermal Response ( Z thJC ) °C/W 1 D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 τJ R1 R1 τJ τ1 0.001 τC τ2 τ1 τ2 Ci= τi/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 R2 R2 1E-005 0.0001 τ Ri (°C/W) 0.17537 0.22547 τi (sec) 0.000343 0.006073 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 13.
PAGE 6
4.5 35 4.0 30 3.5 25 3.0 20 2.5 ID = 250μA 2.0 ID = 1.0A IRR (A) VGS(th) , Gate threshold Voltage (V) IRFS/SL4010PbF ID = 1.0mA IF = 70A V R = 85V TJ = 25°C TJ = 125°C 15 10 1.5 5 1.0 0 -75 -50 -25 0 25 50 75 100 125 150 175 0 200 T J , Temperature ( °C ) 600 800 1000 Fig. 17 - Typical Recovery Current vs. dif/dt Fig 16. Threshold Voltage vs.
PAGE 7
IRFS/SL4010PbF Driver Gate Drive D.U.T - - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + D= Period P.W. + + - Body Diode Forward Current di/dt D.U.T.
PAGE 8
IRFS/SL4010PbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN THE AS S EMBLY LINE "C" PART NUMBER INT ERNATIONAL RECTIFIER LOGO DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C AS S EMBLY LOT CODE OR INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) YEAR 7 = 1997 WEEK 19 A = ASS EMBLY S IT E CODE Note: For the mo
PAGE 9
IRFS/SL4010PbF D2Pak (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D2Pak (TO-263AB) Part Marking Information T HIS IS AN IRF 530S WIT H LOT CODE 8024 ASS EMBLED ON WW 02, 2000 IN T HE ASS EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO PART NUMBER F 530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L AS SEMBLY LOT CODE OR INT ERNAT IONAL RECT IFIER LOGO ASS EMBLY LOT CODE PART NUMBER F530S DAT E CODE P = DESIGNAT ES LEAD - F REE PRODUCT (OPT IONAL) YEAR 0 = 2000 WEEK 02 A = ASS EMB
PAGE 10
IRFS/SL4010PbF D2Pak (TO-263AB) Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 1.65 (.065) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 1.75 (.069) 1.25 (.049) 10.90 (.429) 10.70 (.421) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.