Datasheet

03/09/11
www.irf.com 1
HEXFET
®
Power MOSFET
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
GDS
Gate Drain Source
IRFS4115PbF
IRFSL4115PbF
S
D
G
D
D
S
G
D
2
Pak
IRFS4115PbF
TO-262
IRFSL4115PbF
V
DSS
150V
R
DS(on)
typ.
10.3m
max.
12.1m
I
D
(Silicon Limited)
99A
I
D (Package Limited)
195A
S
D
G
Absolute Maximum Ratings
Symbol
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
–––
0.4
R
θJA
Junction-to-Ambient
––– 40
°C/W
A
°C
300
830
See Fig. 14, 15, 22a, 22b,
375
18
Max.
99
70
396
195
-55 to + 175
± 20
2.5
10lb in (1.1N m)
PD - 96198A

Summary of content (9 pages)