Datasheet

www.irf.com 1
08/10/06
HEXFET
®
Power MOSFET
Notes  through  are on page 12
PD - 94927A
l High frequency DC-DC converters
l Lead-Free
Benefits
Applications
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
IRFB41N15DPbF
IRFIB41N15DPbF
IRFS41N15DPbF
IRFSL41N15DPbF
V
DSS
R
DS(on)
max I
D
150V
0.045
41A
Absolute Maximum Ratings
Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Power Dissipation, D
2
Pak
W
P
D
@T
C
= 25°C
Power Dissipation, TO-220
P
D
@T
C
= 25°C
Power Dissipation, Fullpak
Linear Derating Factor, TO-220
W/°C
Linear Derating Factor, Fullpak
V
GS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery dv/dt
V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
N•m (lbf•in)
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
––– 0.75 °C/W
R
θ
JC
Junction-to-Case, Fullpak
––– 3.14
R
θ
cs
Case-to-Sink, Flat, Greased Surface
0.50 –––
R
θ
JA
Junction-to-Ambient, TO-220
––– 62
R
θ
JA
Junction-to-Ambient, D
2
Pak
––– 40
R
θ
JA
Junction-to-Ambient, Fullpak
––– 65
3.1
48
0.32
200
1.3
± 30
2.7
Max.
41
29
164
-55 to + 175
300 (1.6mm from case )
1.1(10)
D
2
Pak
IRFS41N15D
TO-220AB
IRFB41N15D
TO-262
IRFSL41N15D
TO-220 FullPak
IRFIB41N15D