Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRFS4321PBF, MOSFET

12/9/10

www.irf.com 1

HEXFET

Power MOSFET

Benefits

l Low R

DSON

Reduces Losses

l Low Gate Charge Improves the Switching

Performance

l Improved Diode Recovery Improves Switching &

EMI Performance

l 30V Gate Voltage Rating Improves Robustness

l Fully Characterized Avalanche SOA

Applications

l Motion Control Applications

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l Hard Switched and High Frequency Circuits

GDS

Gate Drain Source

Pak

IRFS4321PbF

TO-262

IRFSL4321PbF

IRFS4321PbF

IRFSL4321PbF

* R

θJC

(end of life) for D

Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature

cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.

Notes  through  are on page 2

DSS

150V

DS(on)

typ.

12m

max.

15m

85A

Absolute Maximum Ratings

Symbol Parameter Units

@ T

= 25°C Continuous Drain Current, V

@ 10V

@ T

= 100°C Continuous Drain Current, V

@ 10V

Pulsed Drain Current

= 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

Gate-to-Source Voltage

AS (Thermally limited)

Single Pulse Avalanche Energy

Operating Junction and

°C

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Thermal Resistance

Parameter Typ. Max. Units

Junction-to-Case

––– 0.43* °C/W

Junction-to-Ambient

––– 40

-55 to + 175

2.3

300

±30

120

350

Max.

330

PD - 97105C

Summary of content (10 pages)

PAGE 1
PD - 97105C IRFS4321PbF IRFSL4321PbF Applications Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits l Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching Performance l Improved Diode Recovery Improves Switching & EMI Performance l 30V Gate Voltage Rating Improves Robustness l Fully Characterized Avalanche SOA HEXFET® Power MOSFET VDSS RDS(on) typ. max.
PAGE 2
IRFS_SL4321PbF Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS ΔV(BR)DSS/ΔTJ RDS(on) VGS(th) IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance RG(int) Min. Typ. Max. Units 150 ––– ––– 3.0 ––– ––– ––– ––– ––– ––– 150 12 ––– ––– ––– ––– ––– 0.
PAGE 3
IRFS_SL4321PbF 1000 1000 100 BOTTOM 10 1 5.0V 100 BOTTOM 5.0V 10 ≤ 60μs PULSE WIDTH Tj = 175°C ≤ 60μs PULSE WIDTH Tj = 25°C 1 0.1 0.1 1 10 0.1 100 Fig 1. Typical Output Characteristics 10 100 Fig 2. Typical Output Characteristics 3.5 1000 TJ = 175°C 10 TJ = 25°C VDS = 25V ≤ 60μs PULSE WIDTH 0.1 3.0 4.0 5.0 6.0 7.0 8.0 VGS = 10V 3.0 2.
PAGE 4
IRFS_SL4321PbF 1000 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 1000 100 TJ = 175°C 10 TJ = 25°C 1 OPERATION IN THIS AREA LIMITED BY R DS (on) 100μsec 100 1msec 10 10msec 1 Tc = 25°C Tj = 175°C Single Pulse VGS = 0V 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.
PAGE 5
IRFS_SL4321PbF Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.1 R1 R1 0.10 τJ 0.05 0.02 0.01 τJ τ1 R2 R2 R3 R3 τ2 τ1 τ3 τ2 Ci= τi/Ri Ci= τi/Ri 0.01 Ri (°C/W) τC SINGLE PULSE ( THERMAL RESPONSE ) τ3 τ τι (sec) 0.085239 0.000052 0.18817 0.00098 0.176912 0.008365 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 13.
PAGE 6
IRFS_SL4321PbF 40 ID = 1.0A ID = 1.0mA ID = 250μA 5.0 30 4.0 IRRM - (A) VGS(th), Gate threshold Voltage (V) 6.0 3.0 20 IF = 33A VR = 128V 10 2.0 TJ = 125°C TJ = 25°C 0 1.0 -75 -50 -25 0 25 50 75 100 200 300 400 500 600 700 800 900 1000 100 125 150 175 dif / dt - (A / μs) TJ , Temperature ( °C ) Fig. 17 - Typical Recovery Current vs. dif/dt Fig 16. Threshold Voltage Vs.
PAGE 7
IRFS_SL4321PbF D.U.T Driver Gate Drive - - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + D= Period P.W. + + - Body Diode Forward Current di/dt D.U.T.
PAGE 8
IRFS_SL4321PbF D2Pak Package Outline (Dimensions are shown in millimeters (inches)) D2Pak Part Marking Information T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN T HE AS S EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L AS S EMBLY LOT CODE T HIS IS AN IRF530S WIT H LOT CODE 8024 For GB Production AS S EMBLED ON WW 02, 2000 IN T HE AS S EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO LOT CODE 8 PART NUMBER F530S DAT E CODE
PAGE 9
IRFS_SL4321PbF TO-262 Package Outline (Dimensions are shown in millimeters (inches)) TO-262 Part Marking Infor EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN THE AS S EMBLY LINE "C" INTERNATIONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C OR INTERNATIONAL RECT IFIER LOGO AS S EMBLY LOT CODE www.irf.
PAGE 10
IRFS_SL4321PbF D2Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2.