Datasheet

Notes through are on page 11
www.irf.com 1
09/22/10
HEXFET
®
Power MOSFET
l High frequency DC-DC converters
l Plasma Display Panel
Benefits
Applications
l Low Gate-to-Drain Charge to
Reduce\ Switching Losses
l Fully Characterized Capacitance
Including Effective C
OSS
to Simplify
Design, (See App. Note AN1001)
l Fully Characterized Avalanche
Voltage and Current
l Lead-Free
IRFB52N15DPbF
IRFS52N15DPbF
IRFSL52N15DPbF
D
2
Pak
IRFS52N15DPbF
TO-220AB
IRFB52N15DPbF
TO-262
IRFSL52N15DPbF
* R
θJC
(end of life) for D
2
Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case –– 0.47*
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R
θJA
Junction-to-Ambient ––– 62
R
θJA
Junction-to-Ambient ––– 40
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 51*
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 36* A
I
DM
Pulsed Drain Current 240
P
D
@T
A
= 25°C Power Dissipation 3.8 W
P
D
@T
C
= 25°C Power Dissipation 230*
Linear Derating Factor 1.5* W/°C
V
GS
Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt 5.5 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
V
DS
150 V
V
DS (Avalanche)
min.
200 V
R
DS(ON)
max @ 10V
32
m
T
J
max
175 °C
Key Parameters
PD - 97002A

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