Datasheet

01/31/06
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
www.irf.com 1
D
2
Pak
IRFS4310PbF
TO-220AB
IRFB4310PbF
TO-262
IRFSL4310PbF
IRFB4310PbF
IRFS4310PbF
IRFSL4310PbF
HEXFET
®
Power MOSFET
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
S
D
G
S
D
G
S
D
G
S
D
G
V
DSS
100V
R
DS(on)
typ.
5.6m
max. 7.0m
I
D
130A
Absolute Maximum Ratings
Symbol Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V A
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
dV/dt
Peak Diode Recovery
V/ns
T
J
Operating Junction and
°C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
–––
0.50
R
θ
CS
Case-to-Sink, Flat Greased Surface , TO-220
0.50 ––– °C/W
R
θ
JA
Junction-to-Ambient, TO-220
––– 62
R
θ
JA
Junction-to-Ambient (PCB Mount) , D
2
Pak
––– 40
300
Max.
130
92
550
980
See Fig. 14, 15, 22a, 22b,
300
14
-55 to + 175
± 20
2.0
10lb
in (1.1N m)
PD - 14275D