Datasheet

4/21/09
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
www.irf.com 1
Applications
l High Efficiency Synchronous Rectification in
SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
HEXFET
®
Power MOSFET
PD - 97129A
GDS
Gate Drain Source
IRFR1018EPbF
IRFU1018EPbF
Notes  through  are on page 2
S
D
G
D-Pak
IRFR1018EPbF
I-Pak
IRFU1018EPbF
V
DSS
60V
R
DS
(
on
)
typ.
7.1m
:
max.
8.4m
:
I
D
(
Silicon Limited
)
79A
c
I
D
(
Packa
g
e Limited
)
56A
Absolute Maximum Ratings
Symbol Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
A
I
DM
Pulsed Drain Current
d
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
f
V/ns
T
J
Operating Junction and
°C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
e
mJ
I
AR
Avalanche Current
d
A
E
AR
Repetitive Avalanche Energy
g
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
k –––
1.32
R
θ
JA
Junction-to-Ambient (PCB Mount)
jk ––– 50
R
θ
JA
Junction-to-Ambient
k ––– 110
56
c
11
110
21
-55 to + 175
± 20
0.76
°C/W
300
Max.
79
c
56
315
88
47