Datasheet

09/16/10
www.irf.com 1
HEXFET
®
is a registered trademark of International Rectifier.
HEXFET
®
Power MOSFET
V
DSS
= 75V
R
DS(on)
= 16m
I
D
= 42A
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating.These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
S
D
G
Description
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Features
D-Pak
IRFR2307ZPbF
I-Pak
IRFU2307ZPbF
IRFR2307ZPbF
IRFU2307ZPbF
Absolute Maximum Ratin
g
s
Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS (Thermally limited)
Single Pulse Avalanche Energy mJ
E
AS
(Tested )
Single Pulse Avalanche Energy Tested Value
I
AR
Avalanche Current A
E
AR
Repetitive Avalanche Energy mJ
T
J
Operating Junction and
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 1.42
R
θJA
Junction-to-Ambient (PCB mount) ––– 50 °C/W
R
θJA
Junction-to-Ambient ––– 110
140
100
See Fig.12a, 12b, 15, 16
110
0.70
± 20
Max.
53
38
210
42
-55 to + 175
300 (1.6mm from case )
PD - 96191B

Summary of content (11 pages)