Datasheet

IRFR4105ZPbF
IRFU4105ZPbF
HEXFET
®
Power MOSFET
V
DSS
= 55V
R
DS(on)
= 24.5mΩ
I
D
= 30A
09/27/10
www.irf.com 1
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
S
D
G
Description
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Features
D-Pak
IRFR4105ZPbF
I-Pak
IRFU4105ZPbF
HEXFET
®
is a registered trademark of International Rectifier.
Absolute Maximum Ratings
Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
A
I
DM
P
u
l
se
d D
ra
i
n
C
urrent
P
D
@T
C
= 25°C
Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS (Thermally limited)
Si
n
gl
e
P
u
l
se
A
va
l
anc
h
e
E
ner
gy
mJ
E
AS
(Tested )
Si
n
gl
e
P
u
l
se
A
va
l
anc
h
e
E
ner
gy T
este
d V
a
l
ue
I
AR
A
va
l
anc
h
e
C
urrent
A
E
AR
R
epet
i
t
i
ve
A
va
l
anc
h
e
E
ner
gy
mJ
T
J
Operating Junction and
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case ––– 3.12
R
θ
JA
J
unct
i
on-to-
A
m
bi
ent
(PCB
mount
)
––– 40 °C/W
R
θ
JA
Junction-to-Ambient ––– 110
46
29
See Fig.12a, 12b, 15, 16
48
0.32
± 20
Max.
30
21
120
-55 to + 175
300 (1.6mm from case )
10 lbf
in (1.1N m)
PD - 95374B