Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRFU5305PBF, MOSFET N channel 28A 55V

IRFR5305PbF

IRFU5305PbF

HEXFET

Power MOSFET

Fifth Generation HEXFETs from International Rectifier utilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

HEXFET

Power MOSFETs are well known for, provides

the designer with an extremely efficient and reliable device

for use in a wide variety of applications.

The D-Pak is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU series) is for through-hole mounting

applications. Power dissipation levels up to 1.5 watts are

possible in typical surface mount applications.

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ -10V -31

@ T

= 100°C Continuous Drain Current, V

@ -10V -22 A

Pulsed Drain Current  -110

= 25°C Power Dissipation 110 W

Linear Derating Factor 0.71 W/°C

Gate-to-Source Voltage ± 20 V

Single Pulse Avalanche Energy 280 mJ

Avalanche Current -16 A

Repetitive Avalanche Energy 11 mJ

dv/dt Peak Diode Recovery dv/dt  -5.0 V/ns

Operating Junction and -55 to + 175

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Parameter Typ. Max. Units

θJC

Junction-to-Case ––– 1.4

θJA

Junction-to-Ambient (PCB mount)* ––– 50 °C/W

θJA

Junction-to-Ambient** ––– 110

Thermal Resistance

l Ultra Low On-Resistance

l Surface Mount (IRFR5305)

l Straight Lead (IRFU5305)

l Advanced Process Technology

l Fast Switching

l Fully Avalanche Rated

l Lead-Free

Description

12/13/04

D-Pak I-Pak

IRFR5305 IRFU5305

PD-95025A

DSS

= -55V

DS(on)

= 0.065Ω

= -31A

www.irf.com 1

Summary of content (11 pages)

PAGE 1
PD-95025A IRFR5305PbF IRFU5305PbF l l l l l l l Ultra Low On-Resistance Surface Mount (IRFR5305) Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
PAGE 2
IRFR/U5305PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
PAGE 3
IRFR/U5305PbF 1000 1000 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V -ID , Drain-to-Source Current (A) -ID , Drain-to-Source Current (A) 100 10 -4.5V 100 20µs PULSE WIDTH TJc = 25°C A 1 0.1 1 10 10 -4.5V R DS(on) , Drain-to-Source On Resistance (Normalized) -ID , Drain-to-Source Current (A) 2.0 TJ = 25°C TJ = 175°C 10 V DS = -25V 20µs PULSE WIDTH 6 7 8 9 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 A 100 Fig 2.
PAGE 4
IRFR/U5305PbF C, Capacitance (pF) 2000 Ciss 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd -VGS , Gate-to-Source Voltage (V) 2500 Coss 1500 1000 Crss 500 0 10 V DS = -44V V DS = -28V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 A 1 I D = -16A 100 0 -VDS , Drain-to-Source Voltage (V) 30 40 50 A 60 Fig 6. Typical Gate Charge Vs.
PAGE 5
IRFR/U5305PbF RD VDS 35 VGS 30 D.U.T. RG - -ID , Drain Current (A) + VDD 25 -10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 15 Fig 10a. Switching Time Test Circuit 10 td(on) tr t d(off) tf VGS 5 10% 0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) 90% VDS Fig 10b. Switching Time Waveforms Fig 9. Maximum Drain Current Vs. Case Temperature Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 PDM 0.05 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1.
PAGE 6
IRFR/U5305PbF + - D.U.T RG IAS -20V tp VDD A DRIVER 0.01Ω 15V Fig 12a. Unclamped Inductive Test Circuit I AS E AS , Single Pulse Avalanche Energy (mJ) L VDS 700 TOP 600 BOTTOM ID -6.6A -11A -16A 500 400 300 200 100 0 VDD = -25V 25 50 A 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF -10V QGS QGD D.
PAGE 7
IRFR/U5305PbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + ** RG • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test VGS* + - * VDD * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T.
PAGE 8
IRFR/U5305PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 1234 ASSEMBLED ON WW 16, 1999 IN THE ASSEMBLY LINE "A" PART NUMBER INTERNAT IONAL RECTIF IER LOGO Note: "P" in ass embly line pos ition indicates "Lead-Free" IRFU120 12 916A 34 ASSEMBLY LOT CODE DATE CODE YEAR 9 = 1999 WE EK 16 LINE A OR PART NUMBER INT ERNATIONAL RECTIFIER LOGO IRFU120 12 ASSEMBLY LOT CODE 8 34
PAGE 9
IRFR/U5305PbF I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE : T HIS IS AN IRF U120 WIT H ASS EMB LY LOT CODE 5678 AS SE MBLED ON WW 19, 1999 IN T HE ASS EMBLY LINE "A" INT ERNATIONAL RE CT IFIE R LOGO PART NUMBER IRF U120 919A 56 78 ASS EMBLY LOT CODE Note: "P" in as s embly line pos ition indicates "Lead-F ree" DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A OR INT ERNAT IONAL RECT IFIER LOGO PART NUMB ER IRF U120 56 AS SEMB
PAGE 10
IRFR/U5305PbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481.
PAGE 11
Note: For the most current drawings please refer to the IR website at: http://www.irf.