Datasheet

HEXFET
®
Power MOSFET
IRFZ24N
Fifth Generation HEXFET
®
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety
of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
9/13/99
V
DSS
= 55V
R
DS(on)
= 0.07Ω
I
D
= 17A
S
D
G
T
O
-22
0
AB
Parameter Min. Typ. Max. Units
R
θJC
Junction-to-Case –––– –––– 3.3
R
θCS
Case-to-Sink, Flat, Greased Surface –––– 0.50 –––– °C/W
R
θJA
Junction-to-Ambient –––– –––– 62
Thermal Resistance
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 17
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 12 A
I
DM
Pulsed Drain Current  68
P
D
@T
C
= 25°C Power Dissipation 45 W
Linear Derating Factor 0.30 W/°C
V
GS
Gate-to-Source Voltage ±20 V
E
AS
Single Pulse Avalanche Energy  71 mJ
I
AR
Avalanche Current 10 A
E
AR
Repetitive Avalanche Energy 4.5 mJ
dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
www.irf.com 1
PD - 91354A