Data Sheet

ManualsBrandsInfineon Technologies ManualsFETsInfineon Technologies IRFZ2807ZPBF MOSFET 1 N-channel 170 W TO 220AB

09/03/03

www.irf.com 1

HEXFET

is a registered trademark of International Rectifier.

IRF2807Z

IRF2807ZS

IRF2807ZL

HEXFET

Power MOSFET

DSS

= 75V

DS(on)

= 9.4mΩ

= 75A

Features

O Advanced Process Technology

O Ultra Low On-Resistance

O Dynamic dv/dt Rating

O 175°C Operating Temperature

O Fast Switching

O Repetitive Avalanche Allowed up to Tjmax

AUTOMOTIVE MOSFET

Description

Specifically designed for Automotive applications,

this HEXFET

Power MOSFET utilizes the latest

processing techniques to achieve extremely low

on-resistance per silicon area. Additional fea-

tures of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitive avalanche rating . These features com-

bine to make this design an extremely efficient

and reliable device for use in Automotive applica-

tions and a wide variety of other applications.

Pak

IRF2807ZS

TO-220AB

IRF2807Z

TO-262

IRF2807ZL

Absolute Maximum Ratings

Parameter Units

@ T

= 25°C

Continuous Drain Current, V

@ 10V (Silicon Limited)

@ T

= 100°C

Continuous Drain Current, V

@ 10V (See Fig. 9)

@ T

= 25°C

Continuous Drain Current, V

@ 10V

(Package Limited)

Pulsed Drain Current

= 25°C

Maximum Power Dissipation W

Linear Derating Factor W/°C

Gate-to-Source Voltage V

Single Pulse Avalanche Energy (Thermally Limited)

(tested)

Sin

le Pulse Avalanche Ener

Tested Value

Avalanche Current

Repetitive Avalanche Ener

Operating Junction and °C

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

Thermal Resistance

Parameter Typ. Max. Units

Junction-to-Case ––– 0.90 °C/W

Case-to-Sink, Flat, Greased Surface

0.50 –––

Junction-to-Ambient ––– 62

Junction-to-Ambient (PCB Mount, steady state)

––– 40

Max.

350

10 lbf•in (1.1N•m)

170

1.1

± 20

160

200

See Fig.12a,12b,15,16

300 (1.6mm from case )

-55 to + 175

PD - 94659A

Summary of content (12 pages)

PAGE 1
PD - 94659A IRF2807Z IRF2807ZS IRF2807ZL AUTOMOTIVE MOSFET Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET® Power MOSFET D VDSS = 75V RDS(on) = 9.4mΩ G Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
PAGE 2
IRF2807Z/S/L Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) Min. Typ. Max. Units Qg Qgs Qgd td(on) tr td(off) tf LD Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance 75 ––– ––– 2.0 67 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.073 7.
PAGE 3
IRF2807Z/S/L 1000 1000 100 BOTTOM 10 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 1 4.5V 0.1 100 BOTTOM 10 4.5V 20µs PULSE WIDTH Tj = 175°C 20µs PULSE WIDTH Tj = 25°C 1 0.01 0.1 1 10 100 0.1 1000 1 10 100 1000 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2.
PAGE 4
IRF2807Z/S/L 100000 VGS, Gate-to-Source Voltage (V) ID= 53A C oss = C ds + C gd 10000 C, Capacitance(pF) 12.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd Ciss Coss Crss 1000 100 VDS= 60V VDS= 38V 10.0 VDS= 15V 8.0 6.0 4.0 2.0 0.0 10 1 10 0 100 20 30 40 50 60 70 80 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs.
PAGE 5
IRF2807Z/S/L 100 90 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 Limited By Package ID, Drain Current (A) 80 70 60 50 40 30 20 10 0 ID = 53A VGS = 10V 2.0 1.5 1.0 0.5 25 50 75 100 125 150 175 -60 -40 -20 0 T C , Case Temperature (°C) 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Normalized On-Resistance vs. Temperature Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.
PAGE 6
IRF2807Z/S/L 300 DRIVER L VDS D.U.T RG + V - DD IAS VGS 20V A 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) 15V ID 22A 38A BOTTOM 53A TOP 250 200 150 100 50 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) I AS Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V QGS QGD VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.
PAGE 7
IRF2807Z/S/L 1000 Avalanche Current (A) Duty Cycle = Single Pulse 100 Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses 0.01 0.05 0.10 10 1 0.1 1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs.Pulsewidth EAR , Avalanche Energy (mJ) 200 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 53A 150 100 50 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 16.
PAGE 8
IRF2807Z/S/L D.U.T Driver Gate Drive + + • • • • D.U.T. ISD Waveform Reverse Recovery Current + dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period * RG D= VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - - Period P.W. V DD + Body Diode Forward Current di/dt D.U.T.
PAGE 9
IRF2807Z/S/L TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 3X 1.40 (.055) 3X 1.15 (.045) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 0.93 (.037) 0.69 (.027) 0.36 (.014) 3X M B A M 0.55 (.022) 0.46 (.
PAGE 10
IRF2807Z/S/L D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF530S WIT H LOT CODE 8024 ASS EMBLED ON WW 02, 2000 IN T HE ASS EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO ASS EMBLY LOT CODE 10 PART NUMBER F 530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L www.irf.
PAGE 11
IRF2807Z/S/L TO-262 Package Outline Dimensions are shown in millimeters (inches) IGBT 1- GATE 2- COLLECTOR 3- EMITTER TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 ASS EMBLED ON WW 19, 1997 IN THE ASS EMBLY LINE "C" INT ERNATIONAL RECTIFIER LOGO AS SEMBLY LOT CODE www.irf.
PAGE 12
IRF2807Z/S/L D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.