Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRFZ34NPBF, MOSFET N channel 26A 55V

IRFZ34N

HEXFET

Power MOSFET

PD -9.1276C

DSS

= 55V

DS(on)

= 0.040Ω

= 29A

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Ease of Paralleling

Thermal Resistance

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

the lowest possible on-resistance per silicon area.

This benefit, combined with the fast switching speed

and ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient device for use in a wide

variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 watts. The low thermal

resistance and low package cost of the TO-220

contribute to its wide acceptance throughout the

industry.

Description

Parameter Min. Typ. Max. Units

θJC

Junction-to-Case –––– –––– 2.2

θCS

Case-to-Sink, Flat, Greased Surface –––– 0.50 –––– °C/W

θJA

Junction-to-Ambient –––– –––– 62

TO-220AB

8/25/97

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 10V 29

@ T

= 100°C Continuous Drain Current, V

@ 10V 20 A

Pulsed Drain Current  100

= 25°C Power Dissipation 68 W

Linear Derating Factor 0.45 W/°C

Gate-to-Source Voltage ± 20 V

Single Pulse Avalanche Energy 65 mJ

Avalanche Current 16 A

Repetitive Avalanche Energy 6.8 mJ

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns

Operating Junction and -55 to + 175

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Summary of content (8 pages)

PAGE 1
PD -9.1276C IRFZ34N HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l D l VDSS = 55V RDS(on) = 0.040Ω G ID = 29A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
PAGE 2
IRFZ34N Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(ON) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS ∆V(BR)DSS/∆TJ Min. 55 ––– ––– 2.0 6.5 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.052 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 7.
PAGE 3
IRFZ34N 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V 100 10 4.5V 1 20 µ s PU LSE W ID TH TC = 25 °C 0.1 0.1 1 10 A 100 10 0.1 R D S (o n) , D ra in -to -S o u rc e O n R e s ista n ce (N o rm a lize d ) I D , D r ain- to-S ourc e C u rre nt (A ) TJ = 2 5 °C TJ = 1 7 5 °C 10 VD S = 2 5 V 2 0 µ s PU L SE W ID TH 7 8 9 V G S , Ga te-to-S o urce V oltage (V ) Fig 3. Typical Transfer Characteristics 10 A 100 Fig 2. Typical Output Characteristics 2.
PAGE 4
IRFZ34N V GS C is s C rs s C is s C o ss C , C a p a c ita n c e (p F ) 1000 20 = 0 V, f = 1M H z = C g s + C gd , Cds SH OR TED = C gd = C ds + C gd V G S , G a te -to -S o u rc e V o lta g e (V ) 1200 I D = 1 6A V DS = 4 4V V DS = 2 8V 16 800 C o ss 12 600 400 C rss 200 0 10 4 FO R TES T C IR CU IT SEE FIG U R E 13 0 A 1 8 0 100 V D S , D rain-to-S ource Voltage (V ) 20 30 A 40 Q G , Total Gate Charge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6.
PAGE 5
IRFZ34N 30 RD VDS VGS I D , Drain Current (A) 25 D.U.T. RG + - VDD 20 10 V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 15 10 Fig 10a. Switching Time Test Circuit VDS 5 90% 0 25 50 75 100 125 T C , Case Temperature 150 175 ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1.
PAGE 6
IRFZ34N D.U.T. RG + V - DD IAS 10 V tp 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS E A S , S in g le P u lse A va la n c h e E n e rg y (m J ) 140 L VDS TOP 120 BO TTOM 100 80 60 40 20 0 V D D = 2 5V 25 50 A 75 100 125 150 Starting TJ , Junction T emperature (°C) tp VDD Fig 12c. Maximum Avalanche Energy Vs. Drain Current VDS IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ 12V .2µF QG .3µF 10 V QGS ID 6 .5A 11A 16 A D.U.T.
PAGE 7
IRFZ34N Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + • • • • RG Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
PAGE 8
IRFZ34N Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) -B - 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 3X 3X 1.40 (.055) 1.15 (.045) LE AD ASSIG NM EN T S 1 - GATE 2 - DR AIN 3 - SOU RC E 4 - DR AIN 3 0.93 (.037) 0.69 (.027) 0.36 (.014) 3X M B A M 0.