Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRFZ44ES, MOSFET N channel 48A 60V

IRFZ44ES/L

HEXFET

Power MOSFET

PD - 9.1714

11/18/97

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 10V 48

@ T

= 100°C Continuous Drain Current, V

@ 10V 34 A

Pulsed Drain Current  192

= 25°C Power Dissipation 110 W

Linear Derating Factor 0.71 W/°C

Gate-to-Source Voltage ± 20 V

Single Pulse Avalanche Energy 220 mJ

Avalanche Current 29 A

Repetitive Avalanche Energy 11 mJ

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns

Operating Junction and -55 to + 175

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Parameter Typ. Max. Units

θJC

Junction-to-Case ––– 1.4

θCS

Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W

θJA

Junction-to-Ambient ––– 62

Thermal Resistance

www.irf.com 1

l Advanced Process Technology

l Surface Mount (IRFZ44ES)

l Low-profile through-hole (IRFZ44EL)

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

Fifth Generation HEXFETs from International Rectifier utilize advanced

processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device

design that HEXFET Power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a wide variety of

applications.

The D

Pak is a surface mount power package capable of accommodating die

sizes up to HEX-4. It provides the highest power capability and the lowest

possible on-resistance in any existing surface mount package. The D

Pak is

suitable for high current applications because of its low internal connection

resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRFZ44EL) is available for low-profile applications.

Description

DSS

= 60V

DS(on)

= 0.023Ω

= 48A

D Pak

TO-262

PRELIMINARY

Summary of content (10 pages)

PAGE 1
PD - 9.1714 IRFZ44ES/L PRELIMINARY HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS(on) = 0.023Ω G ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
PAGE 2
IRFZ44ES/L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 60 ––– ––– 2.
PAGE 3
IRFZ44ES/L 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 100 100 10 4.5V 4.5V 10 20µs PULSE WIDTH TJ = 25 °C 1 0.1 1 10 100 2.5 R DS(on) , Drain-to-Source On Resistance (Normalized) TJ = 25 ° C 100 TJ = 175 ° C 10 V DS = 25V 20µs PULSE WIDTH 5 6 7 8 9 10 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2.
PAGE 4
IRFZ44ES/L 2500 20 2000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) Ciss 1500 Coss 1000 Crss 500 VDS = 48V VDS = 30V 16 12 8 4 1 10 0 100 10 20 30 40 50 60 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs.
PAGE 5
IRFZ44ES/L RD V DS 50 50 VGS D.U.T. RG 40 40 + V DD I D , Drain Current (A) I D , Drain Current (A) - 10V 30 30 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 20 Fig 10a. Switching Time Test Circuit VDS 10 10 0 90% 0 25 25 50 50 75 100 125 150 125 ° C) TC ,75Case 100 Temperature (150 TC , Case Temperature ( ° C) 175 175 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.
PAGE 6
15V L VDS D R IV E R D .U .T RG + - VD D IA S 20V 0 .0 1 Ω tp Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S tp A EAS , Single Pulse Avalanche Energy (mJ) IRFZ44ES/L 500 TOP 400 BOTTOM ID 12A 21A 29A 300 200 100 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature( ° C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 10 V QGS D.U.T.
PAGE 7
IRFZ44ES/L Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + • • • • RG Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test D= Period - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
PAGE 8
IRFZ44ES/L D2Pak Package Outline 10.54 (.415) 10.29 (.405) 1.40 (.055) M A X. -A- 1.32 (.052) 1.22 (.048) 2 1.78 (.070) 1.27 (.050) 1 10.16 (.400) REF. -B- 4.69 (.185) 4.20 (.165) 6.47 (.255) 6.18 (.243) 3 15.4 9 (.610) 14.7 3 (.580) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 5.28 (.208) 4.78 (.188) 3X 1.40 (.055) 1.14 (.045) 5.08 (.200) 0.55 (.022) 0.46 (.018) 0.93 (.037) 3X 0.69 (.027) 0.25 (.010) M 8.8 9 (.350) REF. 1.39 (.055) 1.14 (.
PAGE 9
IRFZ44ES/L Package Outline TO-262 Outline Part Marking Information TO-262 www.irf.
PAGE 10
IRFZ44ES/L Tape & Reel Information D2Pak TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 ) F E E D D IR E C TIO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 ) 0 .3 6 8 (.0 1 4 5 ) 0 .3 4 2 (.0 1 3 5 ) 1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 ) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) TR L 1 0 .9 0 (.4 2 9 ) 1 0 .7 0 (.4 2 1 ) 1 .7 5 (.0 6 9 ) 1 .2 5 (.0 4 9 ) 4 .7 2 (.1 3 6 ) 4 .5 2 (.1 7 8 ) 1 6 .1 0 (.6 3 4 ) 1 5 .