Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRFZ46NPBF, MOSFET N channel 46A 55V

IRFZ46N

HEXFET

Power MOSFET

07/15/02

Absolute Maximum Ratings

Parameter Typ. Max. Units

θJC

Junction-to-Case ––– 1.4

θCS

Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W

θJA

Junction-to-Ambient ––– 62

Thermal Resistance

www.irf.com 1

DSS

= 55V

DS(on)

= 16.5mΩ

= 53A



TO-220AB

Advanced HEXFET

Power MOSFETs from International

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 watts. The low thermal

resistance and low package cost of the TO-220 contribute

to its wide acceptance throughout the industry.

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

Description

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 10V 53

@ T

= 100°C Continuous Drain Current, V

@ 10V 37 A

Pulsed Drain Current  180

= 25°C Power Dissipation 107 W

Linear Derating Factor 0.71 W/°C

Gate-to-Source Voltage ± 20 V

Avalanche Current 28 A

Repetitive Avalanche Energy 11 mJ

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns

Operating Junction and -55 to + 175

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

PD-91277A

Summary of content (8 pages)

PAGE 1
PD-91277A IRFZ46N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 16.5mΩ G ID = 53A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
PAGE 2
IRFZ46N Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Q gs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 55 ––– ––– 2.
PAGE 3
IRFZ46N 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 100 100 10 4.5V 20µs PULSE WIDTH TJ = 25 °C 1 0.1 1 10 4.5V 10 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 ° C 100 TJ = 175 ° C 10 V DS= 25V 20µs PULSE WIDTH 6 7 8 9 10 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2.
PAGE 4
IRFZ46N 20 3000 C, Capacitance (pF) 2500 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss 2000 1500 Coss 1000 Crss 500 10 V DS= 44V V DS= 27V V DS= 11V 16 12 8 4 0 1 ID = 28A FOR TEST CIRCUIT SEE FIGURE 13 0 100 0 VDS , Drain-to-Source Voltage (V) 30 40 50 60 70 Fig 6. Typical Gate Charge Vs.
PAGE 5
IRFZ46N 60 VGS 50 ID , Drain Current (A) RD VDS LIMITED BY PACKAGE RG D.U.T. + -VDD 40 V GS 30 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 TC , Case Temperature 150 175 ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response(Z thJC ) 10 1 D = 0.50 0.20 0.10 PDM 0.05 0.1 0.02 0.01 0.01 0.
PAGE 6
15V L VDS DRIVER D.U.T RG + V - DD IAS 20V 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp A EAS , Single Pulse Avalanche Energy (mJ) IRFZ46N 350 TOP 300 BOTTOM ID 11A 20A 28A 250 200 150 100 50 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature( ° C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF VGS QGS D.U.T.
PAGE 7
IRFZ46N Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + RG • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test VGS * + - VDD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
PAGE 8
IRFZ46N TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 1.15 (.045) MIN 1 2 3 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 3X 3X 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) 0.36 (.014) 3X M B A M 0.55 (.022) 0.46 (.