Datasheet

09/21/10
www.irf.com 1
HEXFET
®
is a registered trademark of International Rectifier.
IRFZ46ZPbF
IRFZ46ZSPbF
IRFZ46ZLPbF
HEXFET
®
Power MOSFET
S
D
G
V
DSS
= 55V
R
DS(on)
= 13.6mΩ
I
D
= 51A
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Description
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
D
2
Pak
IRFZ46ZSPbF
TO-220AB
IRFZ46ZPbF
TO-262
IRFZ46ZLPbF
Absolute Maximum Ratings
Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
A
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
E
AS
Single Pulse Avalanche Energy (Thermally Limited)
mJ
E
AS
(tested)
Single Pulse Avalanche Energy Tested Value
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
T
J
Operating Junction and
°C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
––– 1.84 °C/W
R
θ
CS
Case-to-Sink, Flat, Greased Surface
0.50 –––
R
θ
JA
Junction-to-Ambient
––– 62
R
θ
JA
Junction-to-Ambient (PCB Mount, steady state)
––– 40
10 lbf•in (1.1N•m)
82
0.54
± 20
63
97
See Fig.12a,12b,15,16
300 (1.6mm from case )
-55 to + 175
Max.
51
36
200
PD - 95562A