Datasheet

IRFZ48NSPbF
IRFZ48NLPbF
HEXFET
®
Power MOSFET
l Advanced Process Technology
l Surface Mount (IRFZ48NS)
l Low-profile through-hole (IRFZ48NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Advanced HEXFET
®
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-resistance
in any existing surface mount package. The D
2
Pak is
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0W
in a typical surface mount application.
The through-hole version (IRFZ48NL) is available for low-
profile applications.
Description
V
DSS
= 55V
R
DS(on)
= 0.014Ω
I
D
= 64A
2
D Pak
TO-262
S
D
G
3/18/04
Parameter Typ. Max. Units
R
qJC
Junction-to-Case ––– 1.15
R
qJA
Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40
Thermal Resistance
°C/W
Absolute Maximum Ratings
www.irf.com 1
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 64
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 45 A
I
DM
Pulsed Drain Current  210
P
D
@T
A
= 25°C Power Dissipation 3.8 W
P
D
@T
C
= 25°C Power Dissipation 130 W
Linear Derating Factor 0.83 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
I
AR
Avalanche Current 32 A
E
AR
Repetitive Avalanche Energy 13 mJ
dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
PD - 95125
l Lead-Free