Datasheet

IRL1004
HEXFET
®
Power MOSFET
PD - 91702B
S
D
G
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.75
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R
qJA
Junction-to-Ambient ––– 62
Thermal Resistance
V
DSS
= 40V
R
DS(on)
= 0.0065Ω
I
D
= 130A
l Logic-Level Gate Drive
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Fifth Generation HEXFET
®
power MOSFETs from
International Rectifier utilize advanced processing techniques
to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Description
11/29/99
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 130
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 92 A
I
DM
Pulsed Drain Current  520
P
D
@T
C
= 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
V
GS
Gate-to-Source Voltage ± 16 V
E
AS
Single Pulse Avalanche Energy 700 mJ
I
AR
Avalanche Current 78 A
E
AR
Repetitive Avalanche Energy 20 mJ
dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
°C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
www.irf.com 1
TO-220AB