Datasheet

IRL1404ZPbF
IRL1404ZSPbF
IRL1404ZLPbF
HEXFET
®
Power MOSFET
V
DSS
= 40V
R
DS(on)
= 3.1mΩ
I
D
= 120A
06/25/12
www.irf.com 1
Description
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
S
D
G
Features
l Logic Level
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
D
2
Pak
IRL1404ZSPbF
TO-220AB
IRL1404ZPbF
TO-262
IRL1404ZLPbF
PD - 95446B
Absolute Maximum Ratings
Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V A
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C Power Dissipation W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage V
E
AS (Thermally limited)
Single Pulse Avalanche Energy
mJ
E
AS
(Tested ) Single Pulse Avalanche Energy Tested Value
I
AR
Avalanche Current A
E
AR
Repetitive Avalanche Energy mJ
T
J
Operating Junction and
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case ––– 0.65 °C/W
R
θ
CS
Cas e-to-Sink, Flat, Greased Surface 0.50 –––
R
θ
JA
Junction-to-Ambient ––– 62
R
θ
JA
Junction-to-Ambient (PCB Mount) ––– 40
-55 to + 175
300 (1.6mm from case )
10 lbf
in (1.1N
m)
230
1.5
± 16
Max.
200
140
790
120
490
220
See Fig.12a, 12b, 15, 16