Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRL3102S, MOSFET N channel 61A 20V

9/16/97

IRL3102S

PRELIMINARY

HEXFET

Power MOSFET

PD 9.1691A

These HEXFET Power MOSFETs were designed

specifically to meet the demands of CPU core DC-DC

converters. Advanced processing techniques

combined with an optimized gate oxide design results

in a die sized specifically to offer maximum efficiency

at minimum cost.

The D

Pak is a surface mount power package capable

of accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

Pak is suitable for high current applications because

of its low internal connection resistance and can

dissipate up to 2.0W in a typical surface mount

application.

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 4.5V 61

@ T

= 100°C Continuous Drain Current, V

@ 4.5V 39 A

Pulsed Drain Current  240

= 25°C Power Dissipation 89 W

Linear Derating Factor 0.71 W/°C

Gate-to-Source Voltage ± 10 V

Single Pulse Avalanche Energy 220 mJ

Avalanche Current 35 A

Repetitive Avalanche Energy 8.9 mJ

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns

Operating Junction and -55 to + 150

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Absolute Maximum Ratings

DSS

= 20V

DS(on)

= 0.013W

= 61A

Description

Parameter Typ. Max. Units

qJC

Junction-to-Case ––– 1.4

qJA

Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40 °C/W

Thermal Resistance

D Pak

l Advanced Process Technology

l Surface Mount

l Optimized for 4.5V-7.0V Gate Drive

l Ideal for CPU Core DC-DC Converters

l Fast Switching

Summary of content (8 pages)

PAGE 1
PD 9.1691A IRL3102S PRELIMINARY HEXFET® Power MOSFET l l l l l Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching D VDSS = 20V RDS(on) = 0.013W G ID = 61A S Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters.
PAGE 2
IRL3102S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current Min. 20 ––– ––– ––– 0.
PAGE 3
` IRL3102S 1000 1000 VGS VGS 15V 10V 12V 8.0V 10V 6.0V 8.0V 4.0V 6.0V 4.0V 3.0V BOTTOM3.0V 2.5V BOTTOM 2.5V 100 100 2.5V 20µs PULSE WIDTH TJ = 25 °C 10 0.1 1 10 2.5V 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) TJ = 25 ° C 100 TJ = 150 ° C 10 V DS = 15V 20µs PULSE WIDTH 3 4 5 6 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 10 100 Fig 2. Typical Output Characteristics 1000 2 1 VDS , Drain-to-Source Voltage (V) Fig 1.
PAGE 4
IRL3102S VGS = Ciss = Crss = Coss = C, Capacitance (pF) 3600 3000 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd Ciss 2400 1800 Coss 1200 Crss 600 15 VGS , Gate-to-Source Voltage (V) 4200 10 VDS = 16V 12 9 6 3 0 1 ID = 35A 0 100 0 20 VDS , Drain-to-Source Voltage (V) 60 80 100 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs.
PAGE 5
IRL3102S 500 EAS , Single Pulse Avalanche Energy (mJ) 70 I D , Drain Current (A) 60 50 40 30 20 10 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) TOP 400 BOTTOM ID 16A 22A 35A 300 200 100 0 25 50 75 100 125 150 Starting TJ , Junction Temperature( °C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Avalanche Energy Vs. Drain Current Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 0.01 0.00001 P DM 0.05 0.02 0.
PAGE 6
0.015 0.014 VGS = 4.5V 0.013 0.012 0.011 VGS = 7.0V 0.010 0 20 40 60 80 I D , Drain Current (A) Fig 12. On-Resistance Vs. Drain Current R DS (on), Drain-to-Source On Resistance (W) R DS (on) , Drain-to-Source On Resistance(W) IRL3102S 0.020 0.018 0.016 0.014 ID = 61A 0.012 0.010 0.008 0 2 4 6 8 VGS , Gate-to-Source Voltage (V) Fig 13. On-Resistance Vs.
PAGE 7
IRL3102S D2Pak Package Outline 10.54 (.415) 10.29 (.405) 1.40 (.055) M A X. -A- 1.32 (.052) 1.22 (.048) 2 1.78 (.070) 1.27 (.050) 1 10.16 (.400) REF. -B- 4.69 (.185) 4.20 (.165) 6.47 (.255) 6.18 (.243) 15.4 9 (.610) 14.7 3 (.580) 3 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 5.28 (.208) 4.78 (.188) 3X 1.40 (.055) 1.14 (.045) 3X 5.08 (.200) 0.55 (.022) 0.46 (.018) 0.93 (.037) 0.69 (.027) 0.25 (.010) M 8.8 9 (.350) REF. 1.39 (.055) 1.14 (.
PAGE 8
IRL3102S Tape & Reel Information D2Pak TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 ) F E E D D IR E C TIO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 ) 0 .3 6 8 (.0 1 4 5 ) 0 .3 4 2 (.0 1 3 5 ) 1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 ) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) TR L 1 0 .9 0 (.4 2 9 ) 1 0 .7 0 (.4 2 1 ) 1 .7 5 (.0 6 9 ) 1 .2 5 (.0 4 9 ) 4 .7 2 (.1 3 6 ) 4 .5 2 (.1 7 8 ) 1 6 .1 0 (.6 3 4 ) 1 5 .9 0 (.