Datasheet

9/17/97
IRL3302S
PRELIMINARY
HEXFET
®
Power MOSFET
PD - 9.1692A
S
D
G
V
DSS
= 20V
R
DS(on)
= 0.020W
I
D
= 39A
Description
Parameter Typ. Max. Units
R
qJC
Junction-to-Case ––– 2.2
R
qJA
Junction-to-Ambient ( PCB Mounted,steady-state)** –– 40 °C/W
Thermal Resistance
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 4.5V 39
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 4.5V 25 A
I
DM
Pulsed Drain Current  160
P
D
@T
C
= 25°C Power Dissipation 57 W
Linear Derating Factor 0.45 W/°C
V
GS
Gate-to-Source Voltage ± 10 V
E
AS
Single Pulse Avalanche Energy 130 mJ
I
AR
Avalanche Current 23 A
E
AR
Repetitive Avalanche Energy 5.7 mJ
dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T
J
Operating Junction and -55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Absolute Maximum Ratings
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters. Advanced processing techniques
combined with an optimized gate oxide design results
in a die sized specifically to offer maximum efficiency
at minimum cost.
The D
2
Pak is a surface mount power package capable
of accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because
of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount
application.
2
D Pak
l Advanced Process Technology
l Surface Mount
l Optimized for 4.5V-7.0V Gate Drive
l Ideal for CPU Core DC-DC Converters
l Fast Switching

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