Datasheet

Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 5.0V 110
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 5.0V 67 A
I
DM
Pulsed Drain Current  420
P
D
@T
C
= 25°C Power Dissipation 140 W
Linear Derating Factor 1.1 W/°C
V
GS
Gate-to-Source Voltage ± 10 V
V
GSM
Gate-to-Source Voltage 14 V
(Start Up Transient, tp = 100µs)
E
AS
Single Pulse Avalanche Energy 390 mJ
I
AR
Avalanche Current 64 A
E
AR
Repetitive Avalanche Energy 14 mJ
dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T
J
Operating Junction and -55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
11/17/97
IRL3502
PRELIMINARY
HEXFET
®
Power MOSFET
PD 9.1698A
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters. Advanced processing techniques
combined with an optimized gate oxide design results
in a die sized specifically to offer maximum efficiency
at minimum cost.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
S
D
G
Absolute Maximum Ratings
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.89
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R
θJA
Junction-to-Ambient ––– 62
Thermal Resistance
V
DSS
= 20V
R
DS(on)
= 0.007Ω
I
D
= 110A
T
O
-22
0
AB
Description
l Advanced Process Technology
l Optimized for 4.5V-7.0V Gate Drive
l Ideal for CPU Core DC-DC Converters
l Fast Switching