Datasheet

11/18/97
IRL3502S
PRELIMINARY
HEXFET
®
Power MOSFET
PD -9.1676A
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.
The D
2
Pak is a surface mount power package capable
of accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because
of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount
application.
S
D
G
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 4.5V 110
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 4.5V 67 A
I
DM
Pulsed Drain Current  420
P
D
@T
C
= 25°C Power Dissipation 140 W
Linear Derating Factor 1.1 W/°C
V
GS
Gate-to-Source Voltage ± 10 V
V
GSM
Gate-to-Source Voltage 14 V
(Start Up Transient, tp = 100µs)
E
AS
Single Pulse Avalanche Energy 390 mJ
I
AR
Avalanche Current 64 A
E
AR
Repetitive Avalanche Energy 14 mJ
dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T
J
Operating Junction and -55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Absolute Maximum Ratings
V
DSS
= 20V
R
DS(on)
= 0.007W
I
D
= 110A
Description
Parameter Typ. Max. Units
R
qJC
Junction-to-Case ––– 0.89
R
qJA
Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40 °C/W
Thermal Resistance
2
D Pak
l Advanced Process Technology
l Surface Mount
l Optimized for 4.5V-7.0V Gate Drive
l Ideal for CPU Core DC-DC Converters
l Fast Switching