Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRL3705NS, MOSFET N channel 89A 55V

IRL3705NS/L

HEXFET

Power MOSFET

PD - 91502C

l Advanced Process Technology

l Surface Mount (IRL3705NS)

l Low-profile through-hole (IRL3705NL)

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

Absolute Maximum Ratings

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power MOSFETs

are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of

applications.

The D

Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

Pak is suitable for high current applications because of

its low internal connection resistance and can dissipate

up to 2.0W in a typical surface mount application.

The through-hole version (IRL3705NL) is available for low-

profile applications.

Description

DSS

= 55V

DS(on)

= 0.01Ω

= 89A

D Pak

TO-262

5/12/98

l Logic-Level Gate Drive

Parameter Typ. Max. Units

θJC

Junction-to-Case ––– 0.90

θJA

Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40

Thermal Resistance

°C/W

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 10V 89

@ T

= 100°C Continuous Drain Current, V

@ 10V 63 A

Pulsed Drain Current  310

= 25°C Power Dissipation 3.8 W

= 25°C Power Dissipation 170 W

Linear Derating Factor 1.1 W/°C

Gate-to-Source Voltage ± 16 V

Single Pulse Avalanche Energy 340 mJ

Avalanche Current 46 A

Repetitive Avalanche Energy 1.7 mJ

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns

Operating Junction and -55 to + 175

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Summary of content (10 pages)

PAGE 1
PD - 91502C IRL3705NS/L Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL3705NS) l Low-profile through-hole (IRL3705NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET® Power MOSFET l D VDSS = 55V RDS(on) = 0.01Ω G Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
PAGE 2
IRL3705NS/L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 55 ––– ––– ––– ––– 1.
PAGE 3
IRL3705NS/L 1000 1000 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V ID , Drain-to-Source Current (A ) ID , D rain-to-S ource C urrent (A ) 100 10 2.5V 2 0µ s P U LS E W ID T H T J = 2 5°C 1 0.1 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP TOP 1 10 100 2 .5V 10 2 0µ s P U LS E W ID TH T J = 1 75 °C 1 A 0.1 100 1 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 3.
PAGE 4
IRL3705NS/L V GS C iss C rs s C iss C o ss C , Capacitance (pF) 5000 = = = = 15 0V , f = 1MHz C g s + C g d , C d s S H O R TE D C gd C ds + C g d V G S , G ate-to-S ource V oltage (V ) 6000 C oss 2000 C rss 1000 0 10 9 6 3 FO R TE S T C IR C U IT S E E FIG U R E 1 3 0 A 1 V D S = 44 V V D S = 28 V 12 4000 3000 I D = 46 A 0 100 V D S , D rain-to-S ourc e V oltage (V ) 40 60 80 100 120 A 140 Q G , T otal G ate C harge (nC ) Fig 5. Typical Capacitance Vs.
PAGE 5
IRL3705NS/L 100 RD VDS LIMITED BY PACKAGE VGS 80 D.U.T. I D , Drain Current (A) RG + V - DD 60 5.0V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 40 Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( ° C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.01 0.00001 0.10 0.05 0.02 0.
PAGE 6
IRL3705NS/L 1 5V D R IV E R L VD S D .U .T RG IA S 10V tp + - VD D A 0.0 1 Ω Fig 12a. Unclamped Inductive Test Circuit E A S , S ingle Pulse Avalanc he E nergy (m J) 800 TOP B O TT O M 600 400 200 0 V D D = 25 V 25 50 A 75 100 125 150 Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 12V .2µF .3µF 5.0 V QGS D.U.T. QGD + V - DS VGS VG 3mA Charge Fig 13a.
PAGE 7
IRL3705NS/L Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + • • • • RG Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test D= Period - V DD P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
PAGE 8
IRL3705NS/L D2Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A- 1.3 2 (.05 2) 1.2 2 (.04 8) 2 1.7 8 (.07 0) 1.2 7 (.05 0) 1 1 0.16 (.4 00 ) RE F. -B - 4.69 (.1 85) 4.20 (.1 65) 6.47 (.2 55 ) 6.18 (.2 43 ) 3 15 .4 9 (.6 10) 14 .7 3 (.5 80) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 5 .28 (.20 8) 4 .78 (.18 8) 3X 1.40 (.0 55) 1.14 (.0 45) 5 .08 (.20 0) 0.5 5 (.022 ) 0.4 6 (.018 ) 0 .93 (.03 7 ) 3X 0 .69 (.02 7 ) 0 .25 (.01 0 ) M 8.8 9 (.3 50 ) R E F.
PAGE 9
IRL3705NS/L Package Outline TO-262 Outline Part Marking Information TO-262
PAGE 10
IRL3705NS/L Tape & Reel Information D2Pak TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 ) F E E D D IRE CTIO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 1 .60 (.06 3) 1 .50 (.05 9) 1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 ) 0 .3 68 (.0 1 4 5 ) 0 .3 42 (.0 1 3 5 ) 1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 ) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) TR L 10 .9 0 (.42 9) 10 .7 0 (.42 1) 1 .75 (.06 9 ) 1 .25 (.04 9 ) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8) 16 .10 (.63 4 ) 15 .90 (.