Datasheet
www.irf.com 1
7/30/04
IRL3714ZPbF
IRL3714ZSPbF
IRL3714ZLPbF
HEXFET
®
Power MOSFET
Notes through are on page 12
Applications
Benefits
l Low R
DS(on)
at 4.5V V
GS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l Lead-Free
PD - 95661
D
2
Pak
IRL3714ZS
TO-220AB
IRL3714Z
TO-262
IRL3714ZL
V
DSS
R
DS(on)
max
Qg
20V
16m
4.8nC
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation W
P
D
@T
C
= 100°C
Maximum Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
––– 4.3 °C/W
R
θ
CS
Case-to-Sink, Flat Greased Surface
0.50 –––
R
θ
JA
Junction-to-Ambient
––– 62
R
θ
JA
Junction-to-Ambient (PCB Mount)
––– 40
35
0.23
18
Max.
36
25
140
± 20
20
300 (1.6mm from case)
-55 to + 175