Datasheet

www.irf.com 1
05/18/04
IRL7833PbF
IRL7833SPbF
IRL7833LPbF
HEXFET
®
Power MOSFET
Notes  through  are on page 12
Applications
Benefits
l Very Low RDS(on) at 4.5V V
GS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Consumer Use
l Lead-Free
D
2
Pak
IRL7833S
TO-220AB
IRL7833
TO-262
IRL7833L
V
DSS
R
DS(on)
max
Qg
30V
3.8m
32nC
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
P
D
@T
C
= 100°C
Maximum Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case ––– 1.04
R
θ
CS
Case-to-Sink, Flat, Greased Surface
0.50 ––– °C/W
R
θ
JA
Junction-to-Ambient
––– 62
R
θ
JA
Junction-to-Ambient (PCB Mount)
––– 40
Max.
150
110
600
± 20
30
10 lbf
in (1.1N m)
-55 to + 175
140
0.96
72
PD - 95270