Datasheet

02/12/09
www.irf.com 1
HEXFET
®
Power MOSFET
Benefits
l Optimized for Logic Level Drive
l Very Low R
DS(ON)
at 4.5V V
GS
l Superior R*Q at 4.5V V
GS
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
Applications
l DC Motor Drive
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
S
D
G
PD - 97369
IRLB4030PbF
GDS
Gate Drain Source
TO-220AB
V
DSS
100V
R
DS
(
on
)
typ.
3.4m
Ω
max.
4.3m
Ω
I
D
180A
G
D
S
Absolute Maximum Ratings
Symbol Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
V/ns
T
J
Operating Junction and
°C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS (Thermally limited)
Sin
g
le Pulse Avalanche Ener
g
y
mJ
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Ener
g
y
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
–––
0.40
°C/W
R
θ
CS
Case-to-Sink, Flat, Greased Surface
0.50 –––
R
θ
JA
Junction-to-Ambient
––– 62
305
See Fig. 14, 15, 22a, 22b,
370
21
-55 to + 175
± 16
2.5
10lb
in (1.1N m)
300
Max.
180
130
730