Datasheet

www.irf.com 1
4/22/09
IRLB8721PbF
HEXFET
®
Power MOSFET
Notes  through  are on page 9
GDS
Gate Drain Source
PD - 97390
TO-220AB
IRLB8721PbF
S
D
G
D
Applications
Benefits
l Very Low RDS(on) at 4.5V V
GS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l Lead-Free
l Optimized for UPS/Inverter Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
V
DSS
R
DS(on)
max
Qg (typ.)
30V
8.7m
@V
GS
= 10V
7.6nC
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation
P
D
@T
C
= 100°C
Maximum Power Dissipation
Linear Derating Factor
W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case
––– 2.3
R
θCS
Case-to-Sink, Flat Greased Surface
0.5 –––
R
θJA
Junction-to-Ambient
––– 62
V
°C
°C/W
W
A
0.43
33
10lb
in (1.1N m)
-55 to + 175
300 (1.6mm from case)
65
Max.
62
250
± 20
30
44