Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRLH5030TR2PBF, MOSFET

www.irf.com 1

01/26/12

IRLH5030PbF

HEXFET

Power MOSFET

Notes  through  are on page 8

PD - 97449A

Features and Benefits

Applications

Secondary Side Synchronous Rectification

Inverters for DC Motors

DC-DC Brick Applications

Boost Converters

Features

Benefits

PQFN 5X6 mm

Note

Form

Quantity

IRLH5030TRPBF

PQFN 5mm x 6mm

Tape and Reel

4000

IRLH5030TR2PBF

PQFN 5mm x 6mm

Tape and Reel

1000

Orderable part number Package Type

Standard Pack

100 V

DS(on) max

(@V

= 4.5V)

9.9



g (typical)

G (typical)

1.2



(@T

c(Bottom)

= 25°C)

100 A

Low R

DSon

(



9.0m



)

Lower Conduction Losses

Low Thermal Resistance to PCB (



0.5°C/W)

Enable better thermal dissipation

100% Rg tested

Increased Reliability

Low Profile (



0.9 mm)

results in

Increased Power Density

Industry-Standard Pinout



Multi-Vendor Compatibility

Compatible with Existing Surface Mount Techniques

Easier Manufacturing

RoHS Compliant Containing no Lead, no Bromide and no Halogen

Environmentally Friendlier

MSL1, Industrial Qualification

Increased Reliability

Absolute Maximum Ratings

Parameter Units

Gate-to-Source Voltage

@ T

= 25°C Continuous Drain Current, V

@ 10V

@ T

= 70°C Continuous Drain Current, V

@ 10V

@ T

C(Bottom )

= 25°C Continuous Drain Current, V

@ 10V

@ T

C(Bottom )

= 100°C Continuous Drain Current, V

@ 10V

Pulsed Drain Current

= 25°C

Power Dissipation

@ T

C(Bottom)

= 25°C

Power Dissipation

Linear Derating Factor W/°C

Operating Junction and

STG

Storage Temperature Range

100

-55 to + 150

3.6

0.029

250

°C

Max.

400

±16

Summary of content (8 pages)

PAGE 1
PD - 97449A IRLH5030PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 4.5V) Qg (typical) RG (typical) ID 100 V 9.9 m 44 1.2 nC 100 (@Tc(Bottom) = 25°C)  h A PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Benefits Low RDSon (9.0m) Low Thermal Resistance to PCB (0.5°C/W) 100% Rg tested Low Profile ( 0.
PAGE 2
IRLH5030PbF Static @ TJ = 25°C (unless otherwise specified) Output Charge Min. 100 ––– ––– ––– 1.0 ––– ––– ––– ––– ––– 160 ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.10 7.2 7.9 ––– -5.9 ––– ––– ––– ––– ––– 94 44 7.7 4.0 22 10.3 26 20 Conditions Max. Units ––– V VGS = 0V, ID = 250μA ––– V/°C Reference to 25°C, ID = 1mA VGS = 10V, ID = 50A 9.0 m VGS = 4.5V, ID = 50A 9.9 2.
PAGE 3
IRLH5030PbF 1000 1000 VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V 2.7V BOTTOM VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V 2.7V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 100 BOTTOM 100 2.7V 2.7V 60μs PULSE WIDTH 60μs PULSE WIDTH Tj = 150°C Tj = 25°C 10 10 0.1 1 10 100 0.1 V DS, Drain-to-Source Voltage (V) 100 Fig 2. Typical Output Characteristics 1000 2.
PAGE 4
IRLH5030PbF 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 T J = 150°C 100 T J = 25°C 10 1 OPERATION IN THIS AREA LIMITED BY R DS(on) 100μsec 100 1msec 10msec 10 DC Tc = 25°C Tj = 150°C Single Pulse VGS = 0V 0.1 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 1000 Fig 8. Maximum Safe Operating Area 2.
PAGE 5
25 1000 ID = 50A 20 T J = 125°C 15 10 T J = 25°C 5 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m ) IRLH5030PbF ID 5.5A 12A BOTTOM 50A 900 TOP 800 700 600 500 400 300 200 100 0 0 2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current V(BR)DSS tp 15V DRIVER L VDS D.U.
PAGE 6
IRLH5030PbF D.U.T Driver Gate Drive + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations  Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - D= Period P.W. + V DD + Body Diode Forward Current di/dt D.U.T.
PAGE 7
IRLH5030PbF PQFN 5x6 Outline "B" Package Details For footprint and stencil design recommendations, please refer to application note AN-1154 at http://www.irf.com/technical-info/appnotes/an-1154.
PAGE 8
IRLH5030PbF PQFN 5x6 Outline "B" Tape and Reel Qualification information† Qualification level Moisture Sensitivity Level RoHS compliant Indus trial (per JE DE C JE S D47F PQFN 5mm x 6mm †† ††† guidelines ) MS L1 ††† (per JE DE C J-S T D-020D ) Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements.