Datasheet
www.irf.com 1
04/12/10
IRLH5034PbF
HEXFET
®
Power MOSFET
Notes through are on page 8
PD - 97489
Features and Benefits
Applications
• Secondary Side Synchronous Rectification
• Inverters for DC Motors
• DC-DC Brick Applications
• Boost Converters
PQFN 5X6 mm
Note
Form Quantit
y
IRLH5034TRPBF PQFN 5mm x 6mm Ta
p
e and Reel 4000
IRLH5034TR2PBF PQFN 5mm x 6mm Ta
p
e and Reel 1000
Orderable part number Package Type Standard Pac
k
V
DS
40 V
R
DS(on) max
(@V
GS
= 4.5V)
3.2
m
Ω
Q
g (typical)
43
nC
R
G (typical)
1.2
Ω
I
D
(@T
c(Bottom)
= 25°C)
100 A
Features Benefits
Low R
DSon
(≤3.2mΩ @ V
g
s = 4.5V )
Lower Conduction Losses
Low Thermal Resistance to PCB (≤ 0.5°C/W)
Enable better thermal dissipation
100% R
g
tested Increased Reliability
Low Profile (≤ 0.9 mm)
results in Increased Power Density
Industry-Standard Pinout
⇒
Multi-Vendor Compatibility
Compatible with Existin
g
Surface Mount Techniques Easier Manufacturin
g
RoHS Compliant Containin
g
no Lead, no Bromide and no Halo
g
en
Environmentally Friendlier
MSL1, Industrial Qualification Increased Reliability
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C(Bottom)
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C(Bottom)
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Power Dissipation
P
D
@ T
C(Bottom)
= 25°C
Power Dissipation
Linear Derating Factor
W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
-55 to + 150
3.6
0.029
250
Max.
29
100
400
±16
40
23
100
V
W
A
°C