Datasheet

HEXFET
®
Power MOSFET
Notes  through  are on page 9
3.3mm x 3.3mm PQFN
3
2
1
8
7
6
5
4
D
D
D
D
S
S
S
G
Applications
• Battery Operated DC Motor Inverter MOSFET
• Secondary Side Synchronous Rectification MOSFET
Features and Benefits
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 4.5V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 4.5V
I
D
@ T
C(Bottom)
= 25°C
Continuous Drain Current, V
GS
@ 4.5V
I
D
@ T
C(Bottom)
= 100°C
Continuous Drain Current, V
GS
@ 4.5V
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Power Dissipation
P
D
@T
C(Bottom)
= 25°C
Power Dissipation
Linear Derating Factor
W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
V
W
A
°C
Max.
26
40
160
±12
20
21
40
-55 to + 150
2.7
0.022
37
Features
Benefits
Low R
DSon
(<2.5mΩ) Lower Conduction Losses
Low Thermal Resistance to PCB (<3.4°C/W)
Enable better thermal dissipation
Low Profile (<1.0mm)
results in
Increased Power Density
Industry-Standard Pinout
⇒
Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques
Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Environmentally Friendlier
MSL1, Industrial Qualification
Increased Reliability
IRLHM620PbF
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 29, 2014
Note
Form Quantity
IRLHM620TRPBF PQFN 3.3mm x 3.3mm Tape and Reel 4000
IRLHM620TR2PBF
PQFN 3.3mm x 3.3mm Tape and Reel 400 EOL notice #259
Orderable part number Package Type Standard Pack
V
DS
20 V
V
GS
max
±
12 V
R
DS(on) max
(@V
GS
= 4.5V)
2.5 mΩ
R
DS(on) max
(@V
GS
= 2.5V)
3.5 mΩ
Q
g (typical)
52 nC
I
D
(@T
c(Bottom)
= 25°C)
40 A