Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRLHS2242TR2PBF, MOSFET

www.irf.com 1

03/18/11

IRLHS2242PbF

HEXFET

Power MOSFET

Notes  through  are on page 9

Applications

l Charge and Discharge Switch for Battery Application

l System/load switch

Features and Benefits

PD - 96360

Note

Form

Quantity

IRLHS2242TRPBF

PQFN 2mm x 2mm

Tape and Reel

4000

IRLHS2242TR2PBF

PQFN 2mm x 2mm

Tape and Reel

400

Orderable part number Package Type Standard Pack

Absolute Maximum Ratings

Parameter Units

Drain-to-Source Voltage

Gate-to-Source Voltage

@ T

= 25°C

Continuous Drain Current, V

@ 4.5V

@ T

= 70°C

Continuous Drain Current, V

@ 4.5V

@ T

C(Bottom)

= 25°C

Continuous Drain Current, V

@ 4.5V

@ T

C(Bottom)

= 100°C

Continuous Drain Current, V

@ 4.5V

@ T

= 25°C

Continuous Drain Current, V

@ 4.5V (Wirebond Limited)

Pulsed Drain Current

= 25°C

Power Dissipation

C(Bottom)

= 25°C

Power Dissipation

Linear Derating Factor

W/°C

Operating Junction and

STG

Storage Temperature Range

-55 to + 150

2.1

0.02

9.6

Max.

-7.2

-9.8

-34

±12

-20

-5.8

-15

-8.5

°C

Features

Benefits

Low Thermal Resistance to PCB (

≤ 13

°C/W)

Enable better thermal dissipation

Low Profile (

≤

1.0mm)

results in

Increased Power Density

Industry-Standard Pinout

⇒

Multi-Vendor Compatibility

Compatible with Existing Surface Mount Techniques

Easier Manufacturing

RoHS Compliant Containing no Lead, no Bromide and no Halogen

Environmentally Friendlier

MSL1, Consumer Qualification

Increased Reliability

2mm x 2mm PQFN

-20 V

GS max

12 V

DS(on) max

(@V

= 4.5V)

DS(on) max

(@V

= 2.5V)

g typ

9.6

(@T

c(Bottom)

= 25°C)

-8.5 A

TOP VIEW

Summary of content (9 pages)

PAGE 1
PD - 96360 IRLHS2242PbF HEXFET® Power MOSFET VDS -20 V VGS max ±12 V RDS(on) max 31 mΩ (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) Qg typ ID (@Tc(Bottom) = 25°C) T OP VIEW 53 mΩ 9.6 nC -8.5 i D 1 D 6 D D G D D 2 D 5 D D G 3 S 4 S D S S 2mm x 2mm PQFN A Applications l l Charge and Discharge Switch for Battery Application System/load switch Features and Benefits Features Low Thermal Resistance to PCB (≤ 13°C/W) Low Profile (≤ 1.
PAGE 2
IRLHS2242TR/TR2PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS ΔΒVDSS/ΔTJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient -20 ––– ––– 0.01 ––– ––– V VGS = 0V, ID = -250μA V/°C Reference to 25°C, ID = -1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 25 43 31 53 mΩ VGS(th) ΔVGS(th) IDSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current -0.4 ––– ––– -0.8 -3.
PAGE 3
IRLHS2242TR/TR2PbF 100 100 10 BOTTOM TOP -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) TOP VGS -10V -7.0V -4.5V -3.5V -2.5V -2.0V -1.8V -1.5V 1 -1.5V 10 BOTTOM -1.5V 1 ≤60μs PULSE WIDTH ≤60μs PULSE WIDTH Tj = 25°C Tj = 150°C 0.1 0.1 0.1 1 10 0.1 100 10 100 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 100 1.
PAGE 4
IRLHS2242TR/TR2PbF 1000 100 -I D, Drain-to-Source Current (A) -I SD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) T J = 150°C 10 TJ = 25°C 1 100 100μsec 10 1msec 10msec 1 Limited by Wirebond DC 0.1 Tc = 25°C Tj = 150°C Single Pulse VGS = 0V 0.01 0.1 0.2 0.6 0.10 1.0 Fig 7. Typical Source-Drain Diode Forward Voltage 10 100 Fig 8. Maximum Safe Operating Area 1.
PAGE 5
70 80 EAS, Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m Ω) IRLHS2242TR/TR2PbF ID = -8.5A 60 50 40 T J = 125°C 30 20 T J = 25°C ID -2.2A -4.3A BOTTOM -8.5A 70 TOP 60 50 40 30 20 10 0 10 0 2 4 6 8 10 12 25 -VGS -20V IAS 125 150 I AS D.U.T RG 100 Fig 13. Maximum Avalanche Energy vs. Drain Current L VDS 75 Starting T J, Junction Temperature (°C) -VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage 50 VDD A DRIVER 0.
PAGE 6
IRLHS2242TR/TR2PbF Driver Gate Drive D.U.T * + + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • di/dt controlled by RG • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test V DD P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer D= Period P.W. + Body Diode Forward Current di/dt D.U.T.
PAGE 7
IRLHS2242TR/TR2PbF PQFN Package Details PQFN Part Marking 9301 Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.
PAGE 8
IRLHS2242TR/TR2PbF PQFN 2x2 Outline Tape and Reel CORE TAPE Width Table 2: COVER TAPE (WIDTH) 5.4 mm 9.5 mm 8 Remark: - Dimension above are typical dimensions. - Cover tape thickness is 0.048mm +/- 0.005mm. - Surface resistivity 10E5 < Rs <10E9. TOLERANCE +/- 0.1 mm +/- 0.1 mm www.irf.
PAGE 9
IRLHS2242TR/TR2PbF Qualification information † †† Consumer Qualification level (per JEDEC JESD47F Moisture Sensitivity Level ††† guidelines ) MSL1 PQFN 2mm x 2mm (per IPC/JEDEC J-STD-020D†† † ) RoHS compliant Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements.