Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRLHS6242TR2PBF, MOSFET

02/23/2011

IRLHS6242PbF

HEXFET

Power MOSFET

Notes  through  are on page 2

Features and Benefits

www.irf.com 1

Applications

• Charge and discharge switch for battery application

• System/Load Switch

Note

Form

Quantity

IRLHS6242TRPBF

PQFN 2mm x 2mm

Tape and Reel

4000

IRLHS6242TR2PBF

PQFN 2mm x 2mm

Tape and Reel

400

Orderable part number Package Type Standard Pack

Features

Resulting Benefits

Low R

DSon

(

≤

11.7m

Ω)

Lower Conduction Losses

Low Thermal Resistance to PCB (

≤

13°C/W)

Enable better thermal dissipation

Low Profile (

≤

1.0mm)

results in

Increased Power Density

Industry-Standard Pinout

⇒

Multi-Vendor Compatibility

Compatible with Existing Surface Mount Techniques

Easier Manufacturing

RoHS Compliant Containing no Lead, no Bromide and no Halogen

Environmentally Friendlier

2mm x 2mm PQFN

20 V

12 V

DS(on) max

(@V

= 4.5V)

11.7 m

DS(on) max

(@V

= 2.5V)

15.5

mΩ

(@T

C (Bottom)

= 25°C)

12 A

Absolute Maximum Ratings

Parameter Units

Drain-to-Source Voltage

Gate-to-Source Voltage

@ T

= 25°C

Continuous Drain Current, V

@ 4.5V

@ T

= 70°C

Continuous Drain Current, V

@ 4.5V

@ T

C(Bottom)

= 25°C

Continuous Drain Current, V

@ 4.5V

@ T

C(Bottom)

= 70°C

Continuous Drain Current, VGS @ 4.5V

@ T

C(Bottom)

= 25°C

Continuous Drain Current, V

@ 4.5V (Package Limited)

Pulsed Drain Current

= 25°C

Power Dissipation

C(Bottom)

= 25°C

Power Dissipation

Linear Derating Factor

W/°C

Operating Junction and

STG

Storage Temperature Range

-55 to + 150

1.98

0.016

9.6

Max.

±12

8.3

°C

PD - 97582B

Summary of content (9 pages)

PAGE 1
PD - 97582B IRLHS6242PbF HEXFET® Power MOSFET ±12 RDS(on) max 11.7 mΩ (@VGS = 4.5V) RDS(on) max D 6 A G ' (@TC (Bottom) = 25°C) d 6 12 * ID mΩ ' (@VGS = 2.5V) D D ' 15.5 D ' VGS V V : ,( 9 3 2 7 20 ' VDS D S S 2mm x 2mm PQFN Applications • Charge and discharge switch for battery application • System/Load Switch Features and Benefits Features Low RDSon (≤ 11.7mΩ) Low Thermal Resistance to PCB (≤ 13°C/W) Low Profile (≤ 1.
PAGE 2
IRLHS6242PbF Static @ TJ = 25°C (unless otherwise specified) Min. Typ. Drain-to-Source Breakdown Voltage Parameter 20 ––– ––– Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance ––– ––– 6.8 9.4 ––– 11.7 Gate Threshold Voltage ––– 0.5 12.4 0.8 15.5 1.1 Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current ––– ––– ––– -4.2 ––– ––– ––– 1.
PAGE 3
IRLHS6242PbF 100 100 10 BOTTOM 1 0.1 1.4V BOTTOM 10 ≤60μs PULSE WIDTH 1 10 0.1 100 1 10 100 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 100 1.6 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) Tj = 150°C 1 0.01 T J = 150°C TJ = 25°C 10 VDS = 10V ≤60μs PULSE WIDTH 1.0 ID = 8.5A VGS = 4.5V 1.4 1.2 1.0 0.8 0.6 1.0 1.5 2.0 2.5 3.0 3.
PAGE 4
IRLHS6242PbF 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 T J = 150°C T J = 25°C 10 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100μsec 10msec 10 Limited by Wire Bond 1 Tc = 25°C Tj = 150°C Single Pulse VGS = 0V 1.0 DC 0.1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1 VSD, Source-to-Drain Voltage (V) 10 100 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8.
PAGE 5
25 RDS(on), Drain-to -Source On Resistance ( mΩ) RDS(on) , Drain-to -Source On Resistance (mΩ) IRLHS6242PbF ID = 8.5A 20 15 T J = 125°C 10 TJ = 25°C 5 0 2 4 6 8 10 12 14 30 25 20 Vgs = 2.5V 15 Vgs = 4.5V 10 5 16 0 10 20 30 40 50 60 70 ID, Drain Current (A) VGS, Gate -to -Source Voltage (V) Fig 13. Typical On-Resistance vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage 600 70 ID TOP 2.2A 4.3A BOTTOM 8.
PAGE 6
IRLHS6242PbF Id Vds Vgs L VCC DUT 0 1K Vgs(th) S Qgs1 Qgs2 Qgd Qgodr Fig 17b. Gate Charge Waveform Fig 17a. Gate Charge Test Circuit V(BR)DSS 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V tp A I AS 0.01Ω tp Fig 18a. Unclamped Inductive Test Circuit V DS V GS RG RD VDS 90% D.U.T. + -V DD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 Fig 19a. Switching Time Test Circuit 6 Fig 18b. Unclamped Inductive Waveforms 10% VGS td(on) tr td(off) tf Fig 19b.
PAGE 7
IRLHS6242PbF PQFN 2x2 Outline Package Details For footprint and stencil design recommendations, please refer to application note AN-1154 at http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 2x2 Outline Part Marking Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.
PAGE 8
IRLHS6242PbF PQFN 2x2 Outline Tape and Reel 8 www.irf.
PAGE 9
IRLHS6242PbF Qualification information† Qualification level Moisture Sensitivity Level RoHS compliant Cons umer (per JE DE C JE S D47F PQFN 2mm x 2mm †† ††† guidelines ) MS L1 ††† (per JE DE C J-S T D-020D Yes ) Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements.