Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRLHS6242TRPBF, MOSFET

HEXFET

Power MOSFET

Notes  through  are on page 2

Features and Benefits

Applications

• Charge and discharge switch for battery application

• System/Load Switch

G 3

TOP VIEW

2mm x 2mm PQFN

20 V

12 V

DS(on) max

(@V

= 4.5V)

11.7 m

DS(on) max

(@V

= 2.5V)

15.5

mΩ

(@T

C (Bottom)

= 25°C)

12 A

Absolute Maximum Ratings

Parameter Units

Drain-to-Source Voltage

Gate-to-Source Voltage

@ T

= 25°C

Continuous Drain Current, V

@ 4.5V

@ T

= 70°C

Continuous Drain Current, V

@ 4.5V

@ T

C(Bottom)

= 25°C

Continuous Drain Current, V

@ 4.5V

@ T

C(Bottom)

= 70°C

Continuous Drain Current, VGS @ 4.5V

@ T

C(Bottom)

= 25°C

Continuous Drain Current, V

@ 4.5V (Package Limited)

Pulsed Drain Current

= 25°C

Power Dissipation

C(Bottom)

= 25°C

Power Dissipation

Linear Derating Factor

W/°C

Operating Junction and

STG

Storage Temperature Range

-55 to + 150

1.98

0.016

9.6

Max.

±12

8.3

°C

IRLHS6242PbF

Form Quantity

IRLHS6242TRPbF

PQFN 2mm x 2mm

Tape and Reel

4000

IRLHS6242TR2PbF PQFN 2mm x 2mm Tape and Reel 400

EOL notice # 259

Orderable part number Package Type

Standard Pack

Note

Features Resulting Benefits

Low R

DSon

(

≤

11.7m

Ω)

Lower Conduction Losses

Low Thermal Resistance to PCB (

≤

13°C/W) Enable better thermal dissipation

Low Profile (

≤

1.0mm) results in Increased Power Density

Industry-Standard Pinout

⇒

Multi-Vendor Compatibility

Compatible with Existing Surface Mount Techniques

Easier Manufacturing

RoHS Compliant Containing no Lead, no Bromide and no Halogen

Environmentally Friendlier

MSL1, Industrial Qualification Increased Reliability

Summary of content (9 pages)

PAGE 1
IRLHS6242PbF HEXFET® Power MOSFET VDS 20 VGS ±12 V V RDS(on) max 11.7 mΩ (@VGS = 4.5V) RDS(on) max 15.5 (@VGS = 2.5V) ID (@TC (Bottom) = 25°C) 12 d T OP VIEW D 1 mΩ D 2 A G 3 6 D D S D D D 5 D D 4 S D S S 2mm x 2mm PQFN Applications • Charge and discharge switch for battery application • System/Load Switch Features and Benefits Features Low RDSon (≤ 11.7mΩ) Low Thermal Resistance to PCB (≤ 13°C/W) Low Profile (≤ 1.
PAGE 2
IRLHS6242PbF Static @ TJ = 25°C (unless otherwise specified) Min. Typ. Drain-to-Source Breakdown Voltage Parameter 20 ––– ––– Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance ––– ––– 6.8 9.4 ––– 11.7 Gate Threshold Voltage ––– 0.5 12.4 0.8 15.5 1.1 Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current ––– ––– ––– -4.2 ––– ––– ––– 1.
PAGE 3
IRLHS6242PbF 100 100 10 BOTTOM 1 0.1 1.4V BOTTOM 10 ≤60μs PULSE WIDTH 1 10 0.1 100 10 100 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 100 1.6 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) T J = 150°C TJ = 25°C 10 VDS = 10V ≤60μs PULSE WIDTH 1.0 ID = 8.5A VGS = 4.5V 1.4 1.2 1.0 0.8 0.6 1.0 1.5 2.0 2.5 3.0 3.5 -60 -40 -20 0 Fig 4.
PAGE 4
IRLHS6242PbF 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 T J = 150°C T J = 25°C 10 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100μsec 10msec 10 Limited by Wire Bond 1 Tc = 25°C Tj = 150°C Single Pulse VGS = 0V 1.0 DC 0.1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1 VSD, Source-to-Drain Voltage (V) 10 100 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8.
PAGE 5
IRLHS6242PbF RDS(on), Drain-to -Source On Resistance ( mΩ) RDS(on) , Drain-to -Source On Resistance (mΩ) 25 ID = 8.5A 20 15 T J = 125°C 10 TJ = 25°C 5 0 2 4 6 8 10 12 14 30 25 20 Vgs = 2.5V 15 Vgs = 4.5V 10 5 16 0 10 20 30 40 50 60 70 ID, Drain Current (A) VGS, Gate -to -Source Voltage (V) Fig 13. Typical On-Resistance vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage 600 70 ID TOP 2.2A 4.3A BOTTOM 8.
PAGE 6
IRLHS6242PbF Id Vds Vgs L VCC DUT 0 1K Vgs(th) S Qgs1 Qgs2 Qgd Qgodr Fig 17b. Gate Charge Waveform Fig 17a. Gate Charge Test Circuit V(BR)DSS 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V tp A I AS 0.01Ω tp Fig 18a. Unclamped Inductive Test Circuit V DS V GS RG RD VDS 90% D.U.T. + -V DD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 Fig 19a. Switching Time Test Circuit 6 Fig 18b. Unclamped Inductive Waveforms www.irf.
PAGE 7
IRLHS6242PbF PQFN 2x2 Outline Package Details For footprint and stencil design recommendations, please refer to application note AN-1154 at http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 2x2 Outline Part Marking Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 7 www.irf.
PAGE 8
IRLHS6242PbF PQFN 2x2 Outline Tape and Reel 8 www.irf.
PAGE 9
IRLHS6242PbF † Qualification information † Industrial Qualification level Moisture Sensitivity Level (per JE DEC JES D47F PQFN 2mm x 2mm RoHS compliant †† guidelines ) MS L1 †† (per JE DEC J-S T D-020D ) Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Applicable version of JEDEC standard at the time of product release.