Datasheet
02/25/11
IRLHS6342PbF
HEXFET
®
Power MOSFET
Notes through are on page 2
Features and Benefits
www.irf.com 1
Applications
• Charge and discharge switch for battery application
• System/Load Switch
Note
Form Quantit
y
IRLHS6342TRPBF PQFN 2mm x 2mm Ta
p
e and Reel 4000
IRLHS6342TR2PBF PQFN 2mm x 2mm Ta
p
e and Reel 400
Orderable part number Package Type Standard Pack
Features Resultin
g
Benefits
Low R
DSon
(≤ 15.5mΩ) Lower Conduction Losses
Low Thermal Resistance to PCB (≤ 13°C/W)
Enable better thermal dissipation
Low Profile (≤ 1.0 mm) results in Increased Power Density
Compatible with Existing Surface Mount Techniques Easier Manufacturin
g
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Environmentally Friendlier
MSL1, Consumer Qualification Increased Reliability
2mm x 2mm PQFN
G
D
D
S
D
D
S
G 3
S
D2
D1
4S
5D
6D
TOP VIEW
D
D
V
DS
30 V
V
GS
±
12 V
R
DS(on) max
(@V
GS
= 4.5V)
15.5
m
Ω
Q
g (typical)
11
nC
I
D
(@T
C (Bottom)
= 25°C)
12 A
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C(Bottom)
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C(Bottom)
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C(Bottom)
= 25°C
Continuous Drain Current, V
GS
@ 10V (Wirebond Limited)
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Power Dissipation
P
D
@T
A
= 70°C
Power Dissipation
Linear Deratin
g
Factor W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
-55 to + 150
2.1
0.02
1.3
Max.
8.7
15
76
±12
30
6.9
19
12
V
W
A
°C
PD - 96339A