Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRLHS6342TRPBF, MOSFET

HEXFET

Power MOSFET

Notes  through  are on page 2

Features and Benefits

Applications

• Charge and discharge switch for battery application

• System/Load Switch

2mm x 2mm PQFN

G 3

TOP VIEW

30 V

12 V

DS(on) max

(@V

= 4.5V)

15.5

g (typical)

(@T

C (Bottom)

= 25°C)

12 A

Absolute Maximum Ratings

Parameter Units

Drain-to-Source Voltage

Gate-to-Source Voltage

@ T

= 25°C

Continuous Drain Current, V

@ 10V

@ T

= 70°C

Continuous Drain Current, V

@ 10V

@ T

C(Bottom)

= 25°C

Continuous Drain Current, V

@ 10V

@ T

C(Bottom)

= 70°C

Continuous Drain Current, V

@ 10V

@ T

C(Bottom)

= 25°C

Continuous Drain Current, V

@ 10V (Wirebond Limited)

Pulsed Drain Current

= 25°C

Power Dissipation

= 70°C

Power Dissipation

Linear Derating Factor

W/°C

Operating Junction and

STG

Storage Temperature Range

-55 to + 150

2.1

0.02

1.3

Max.

8.7

±12

6.9

°C

IRLHS6342PbF

Form Quantity

IRLHS6342TRPbF PQFN 2mm x 2mm Tape and Reel 4000

IRLHS6342TR2PbF

PQFN 2mm x 2mm

Tape and Reel

400

EOL notice # 259

Orderable part number Package Type

Standard Pack

Note

Features Resulting Benefits

Low R

DSon

(≤ 15.5mΩ) Lower Conduction Losses

Low Thermal Resistance to PCB (

≤

13°C/W) Enable better thermal dissipation

Low Profile (

≤

0.9 mm) results in Increased Power Density

Compatible with Existing Surface Mount Techniques

Easier Manufacturing

RoHS Compliant Containing no Lead, no Bromide and no Halogen

Environmentally Friendlier

MSL1, Industrial Qualification Increased Reliability

Summary of content (9 pages)

PAGE 1
IRLHS6342PbF HEXFET® Power MOSFET VDS 30 V VGS ±12 V RDS(on) max 15.5 mΩ (@VGS = 4.5V) Qg (typical) ID 11 (@TC (Bottom) = 25°C) 12 nC i A TOP VIEW 6 D D 1 D 2 G 3 D S D D D 5 D 4 S D D G S S 2mm x 2mm PQFN Applications • Charge and discharge switch for battery application • System/Load Switch Features and Benefits Features Low RDSon (≤ 15.5mΩ) Low Thermal Resistance to PCB (≤ 13°C/W) Low Profile (≤ 0.
PAGE 2
IRLHS6342PbF Static @ TJ = 25°C (unless otherwise specified) Min. Typ. Drain-to-Source Breakdown Voltage Parameter 30 ––– ––– Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance ––– ––– 22 12.0 ––– 15.5 VGS(th) ΔVGS(th) Gate Threshold Voltage Gate Threshold Voltage Coefficient ––– 0.5 ––– 15.0 ––– -4.2 19.5 1.1 ––– IDSS Drain-to-Source Leakage Current ––– ––– ––– ––– 1.
PAGE 3
IRLHS6342PbF 100 100 10 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 4.5V 3.0V 2.5V 2.0V 1.8V 1.5V 1.4V 1 1.4V BOTTOM 10 1.4V ≤60μs PULSE WIDTH ≤60μs PULSE WIDTH Tj = 150°C Tj = 25°C 1 0.1 0.1 1 10 0.1 100 100 100 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics TJ = 150°C TJ = 25°C 10 VDS = 15V ≤60μs PULSE WIDTH 1.
PAGE 4
IRLHS6342PbF 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 T J = 150°C T J = 25°C 10 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100μsec 1msec 10 Limited by Wire Bond 1 0.1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1 VSD, Source-to-Drain Voltage (V) 10 100 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 20 VGS(th) , Gate threshold Voltage (V) 1.
PAGE 5
IRLHS6342PbF RDS(on), Drain-to -Source On Resistance ( mΩ) RDS(on) , Drain-to -Source On Resistance (mΩ) 30 ID = 8.5A 25 20 T J = 125°C 15 10 T J = 25°C 5 0 2 4 6 8 10 12 28 26 24 22 20 Vgs = 2.5V 18 16 14 Vgs = 4.5V 12 10 14 5 15 25 35 45 55 65 75 ID, Drain Current (A) VGS, Gate -to -Source Voltage (V) Fig 13. Typical On-Resistance vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage 600 60 ID TOP 1.9A 3.4A BOTTOM 8.
PAGE 6
IRLHS6342PbF Id Vds Vgs L VCC DUT 0 1K Vgs(th) S Qgs1 Qgs2 Qgd Qgodr Fig 17b. Gate Charge Waveform Fig 17a. Gate Charge Test Circuit V(BR)DSS 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V tp A I AS 0.01Ω tp Fig 18a. Unclamped Inductive Test Circuit V DS V GS RG RD VDS 90% D.U.T. + -V DD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 Fig 19a. Switching Time Test Circuit 6 Fig 18b. Unclamped Inductive Waveforms www.irf.
PAGE 7
IRLHS6342PbF PQFN 2x2 Outline Package Details For footprint and stencil design recommendations, please refer to application note AN-1154 at http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 2x2 Outline Part Marking Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 7 www.irf.
PAGE 8
IRLHS6342PbF PQFN 2x2 Outline Tape and Reel Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.
PAGE 9
IRLHS6342PbF † Qualification information Industrial Qualification level (per JEDE C JE S D47F Moisture Sensitivity Level †† guidelines ) MS L1 PQFN 2mm x 2mm RoHS compliant † †† (per JE DE C J-S TD-020D ) Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Applicable version of JEDEC standard at the time of product release.