Datasheet

07/19/11
IRLHS6376PbF
HEXFET
®
Power MOSFET
Notes  through  are on page 2
PD - 97607A
Features and Benefits
www.irf.com 1
Applications
• Charge and discharge switch for battery application
• Load/System Switch
Note
Form
Quantity
IRLHS6376TRPBF
PQFN Dual 2mm x 2mm
Tape and Reel
4000
IRLHS6376TR2PBF
PQFN Dual 2mm x 2mm
Tape and Reel
400
Orderable part number Package Type Standard Pack
V
DS
30 V
V
GS
±
12 V
R
DS(on) max
(@V
GS
= 4.5V)
63
m
Ω
R
DS(on) max
(@V
GS
= 2.5V)
82
m
Ω
I
D
(@T
c(Bottom)
= 25°C)
3.4 A
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 4.5V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 4.5V
I
D
@ T
C(Bottom)
= 25°C
Continuous Drain Current, V
GS
@ 4.5V
I
D
@ T
C(Bottom)
= 100°C
Continuous Drain Current, V
GS
@ 4.5V
I
D
@ T
C(Bottom)
= 25°C
Continuous Drain Current, V
GS
@ 4.5V (Package Limited)
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Power Dissipation
P
D
@T
C(Bottom)
= 25°C
Power Dissipation
Linear Derating Factor
W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
V
W
A
°C
Max.
3.6
4.9
30
±12
30
2.9
7.6
3.4
-55 to + 150
1.5
0.012
6.6
Features
Resulting Benefits
Low R
DSon
(
≤
63m
Ω)
Lower Conduction Losses
Low Thermal Resistance to PCB (
≤
19°C/W)
Enable better thermal dissipation
Low Profile (
≤
1.0mm)
results in
Increased Power Density
Industry-Standard Pinout
⇒
Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques
Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Environmentally Friendlier
2mm x 2mm Dual PQFN
D2
G1
S1
S2
G2
D1
D1
D2