Datasheet

www.irf.com 1
8/23/04
Notes  through  are on page 7
Description
This Digital Audio HEXFET
®
is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery
and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD
and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.
PD - 95745
Features
l Advanced Process Technology
l Key Parameters Optimized for Class-D Audio
Amplifier Applications
l Low R
DSON
for Improved Efficiency
l Low Q
g
and Q
sw
for Better THD and Improved
Efficiency
l Low Q
rr
for Better THD and Lower EMI
l 175°C Operating Junction Temperature for
Ruggedness
l Repetitive Avalanche Capability for Robustness and
Reliability
l Lead-Free
S
D
G
DIGITAL AUDIO MOSFET
V
DS
-55
V
R
DS(ON)
typ. @ V
GS
= -10V
93
m
R
DS(ON)
typ. @ V
GS
= -4.5V
150
m
Q
g
typ.
31
nC
T
J
max
175
°C
Key Parameters
IRLIB9343PbF
TO-220 Full-Pak
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ -10V
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ -10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Power Dissipation W
P
D
@T
C
= 100°C
Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Mounting Torque, 6-32 or M3 screw
lbf
in (N m
)
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
––– 3.84 °C/W
R
θJA
Junction-to-Ambient
––– 65
Max.
-10
-60
±20
-55
-14
-40 to + 175
10 (1.1)
33
20
0.26