Datasheet

IRLIZ44N
HEXFET
®
Power MOSFET
PD - 9.1498A
S
D
G
V
DSS
= 55V
R
DS(on)
= 0.022
I
D
= 30A
l Logic-Level Gate Drive
l Advanced Process Technology
l Isolated Package
l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
TO-220 FULLPAK
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
8/25/97
Description
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 3.3
R
θJA
Junction-to-Ambient ––– 65
Thermal Resistance
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 30
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 22 A
I
DM
Pulsed Drain Current  160
P
D
@T
C
= 25°C Power Dissipation 45 W
Linear Derating Factor 0.3 W/°C
V
GS
Gate-to-Source Voltage ± 16 V
E
AS
Single Pulse Avalanche Energy 210 mJ
I
AR
Avalanche Current 25 A
E
AR
Repetitive Avalanche Energy 4.5 mJ
dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
°C/W

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