Datasheet

02/29/12
IRLML0030TRPbF
HEXFET
®
Power MOSFET
www.irf.com 1
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes through
are on page 10
Application(s)
Micro3
TM
(SOT-23)
IRLML0030TRPbF
D
S
G
3
1
2
Load/ System Switch
Features and Benefits
Features
Benefits
V
DS
30 V
V
GS Max
± 20 V
R
DS(on) max
(@V
GS
= 10V)
27
m
Ω
R
DS(on) max
(@V
GS
= 4.5V)
40
m
Ω
Low R
DS(on)
(
27m
Ω
)
Lower switching losses
Industry-standard pinout Multi-vendor compatibility
Compatible with existing Surface Mount Techniques
results in Easier manufacturing
RoHS compliant containing no lead, no bromide and no halogen
Environmentally friendly
MSL1, Industrial qualification Increased reliability
Absolute Maximum Ratings
Symbol
Units
V
DS
Drain-Source Voltage
V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Maximum Power Dissipation
P
D
@T
A
= 70°C
Maximum Power Dissipation
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
T
J,
T
STG
Junction and Storage Temperature Range °C
Thermal Resistance
Symbol
Typ.
Max.
Units
R
θJA
Junction-to-Ambient
––– 100
R
θJA
Junction-to-Ambient (t<10s)
––– 99
Max.
5.3
4.3
-55 to + 150
± 20
0.01
30
1.3
0.8
21
W
°C/W
A
PD - 96278B

Summary of content (10 pages)