Datasheet

03/09/12
IRLML0060TRPbF
HEXFET
®
Power MOSFET
www.irf.com 1
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes  through
 are on page 10
Application(s)
Micro3
TM
(SOT-23)
IRLML0060TRPbF
Load/ System Switch
Features and Benefits
Features
Benefits
V
DS
60 V
V
GS Max
± 16 V
R
DS(on) max
(@V
GS
= 10V)
92
m

R
DS(on) max
(@V
GS
= 4.5V)
116
m

Absolute Maximum Ratings
Symbol
Parameter
Units
V
DS
Drain-Source Voltage
V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V
I
DM Pulsed Drain Current
P
D
@T
A
= 25°C
Maximum Power Dissipation
P
D
@T
A
= 70°C
Maximum Power Dissipation
Linear Derating Factor
W/°C
V
GS Gate-to-Source Voltage
V
T
J,
T
STG
Junction and Storage Temperature Range °C
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
R
JA
Junction-to-Ambient
––– 100
R
JA
Junction-to-Ambient (t<10s)
––– 99
W
°C/W
A
Max.
2.7
2.1
-55 to + 150
± 16
0.01
60
1.25
0.80
11
Industry-standard pinout Multi-vendor compatibility
Compatible with existing Surface Mount Techniques
results in Easier manufacturing
RoHS compliant containing no lead, no bromide and no halogen

Environmentally friendly
MSL1, Industrial qualification Increased reliability
PD - 97439A