Datasheet
11/24/09
IRLML0100TRPbF
HEXFET
®
Power MOSFET
PD - 97157
www.irf.com 1
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes through
are on page 10
Application(s)
Micro3
TM
(SOT-23)
IRLML0100TRPbF
D
S
G
3
1
2
• Load/ System Switch
Features and Benefits
Features
Benefits
Industry-standard pinout Multi-vendor compatibilit
y
Compatible with existing Surface Mount Techniques results in Easier manufacturing
RoHS compliant containing no lead, no bromide and no halogen ⇒ Environmentally friendly
MSL1 Increased reliability
V
DS
100 V
V
GS Max
± 16 V
R
DS(on) max
(@V
GS
= 10V)
220
m
R
DS(on) max
(@V
GS
= 4.5V)
235
m
Absolute Maximum Ratings
Symbol
Parameter
Units
V
DS
Drain-Source Voltage
V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Maximum Power Dissipation
P
D
@T
A
= 70°C
Maximum Power Dissipation
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
T
J,
T
STG
Junction and Storage Temperature Range °C
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
R
θJA
Junction-to-Ambient
––– 100
R
θJA
Junction-to-Ambient (t<10s)
––– 99
W
°C/W
A
Max.
1.6
1.3
-55 to + 150
± 16
0.01
100
1.3
0.8
7.0