Datasheet

11/4/09
IRLML2030TRPbF
HEXFET
®
Power MOSFET
PD - 97432
www.irf.com 1
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes  through
 are on page 10
Application(s)
Micro3
TM
(SOT-23)
IRLML2030TRPbF
D
S
G
3
1
2
• Load/ System Switch
Features and Benefits
Features
Benefits
V
DS
30 V
V
GS Max
± 20 V
R
DS(on) max
(@V
GS
= 10V)
100
m
R
DS(on) max
(@V
GS
= 4.5V)
154
m
Industry-standard pinout Multi-vendor compatibility
Compatible with existing Surface Mount Techniques results in Easier manufacturing
RoHS compliant containing no lead, no bromide and no halogen ⇒ Environmentally friendly
MSL1 Increased reliability
Absolute Maximum Ratings
Symbol Parameter Units
V
DS
Drain-Source Voltage
V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Maximum Power Dissipation
P
D
@T
A
= 70°C
Maximum Power Dissipation
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
T
J,
T
STG
Junction and Storage Temperature Range °C
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJA
Junction-to-Ambient
––– 100
R
θJA
Junction-to-Ambient (t<10s)
––– 99
0.8
11
W
°C/W
A
Max.
2.7
2.2
-55 to + 150
± 20
0.01
30
1.3